Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this paper, the role of channel layer composition on the electrical performance and stability exhibited by thin-film transistors was investigated by magnetron sputtering using ceramic targets of different compositions.
131 citations
TL;DR: In this paper, a molybdenum oxide (MoOx) carrier injection layer was placed between the gate insulator and the source-drain (S-D) electrodes instead of the conventional adhesive layer such as Cr or Ti.
Abstract: We report on the reduced contact resistance in bottom-contact (BC) pentacene thin-film transistors (TFTs) with a molybdenum oxide (MoOx) carrier injection layer MoOx layers were placed between the gate insulator and the source-drain (S-D) electrodes instead of the conventional adhesive layer such as Cr or Ti The performance of the BC pentacene-TFT with the MoOx injection layer was significantly improved at low operating voltages The contact resistance of the MoOx∕Au S-D electrodes, estimated using the gated-transmission line method, was nearly two orders of magnitude smaller than that of conventional Cr∕Au electrodes at the gate voltage of −10V The highest performance was obtained with a MoOx injection layer a few nanometers thick, which was comparable to the effective channel thickness of the pentacene-TFT on the gate insulator This result indicated the importance of the direct connection between the MoOx injection layer and the effective channel to reduce the contact resistance
131 citations
TL;DR: In this article, a fast, open-air atomic layer deposition (ALD) process relying upon the spatial isolation of reactive gases is described, and the ability of this new ALD process to leverage patterning by using poly(methyl methacrylate) (PMMA) as a growth inhibitor for selective area deposition is discussed.
Abstract: We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition rates of greater than 100 Aring per minute, ZnO-based thin-film transistors by spatial atomic layer deposition (S-ALD) show mobility above 15 cm2/Vs and excellent stability. Measurement and modeling of the gas isolation in the deposition head is discussed. Saturation curves obtained for aluminum oxide (Al2O3) growth using trimethylaluminum and water are shown to be consistent with chamber ALD systems. Finally, the ability of this new ALD process to leverage patterning by using poly(methyl methacrylate) (PMMA) as a growth inhibitor for selective area deposition is discussed. Relatively thin films of PMMA (~ 40 Aring) are shown to be capable of inhibiting the growth of ZnO for at least 1200 ALD cycles.
131 citations
TL;DR: In this paper, a bias-and geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer.
Abstract: This paper presents modeling and parameter extraction of the above-threshold characteristics of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) in both linear and saturation regions of operation. A bias- and geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. A method for extraction of model parameters such as threshold voltage, effective mobility, band-tail slope, and contact resistance from the measurement results is presented. This not only provides insight to the device properties, which are highly fabrication-dependent, but also enables accurate and reliable TFT circuit simulation. The techniques presented here form the basis for extraction of physical parameters for other TFTs with similar gap properties, such as organic and polymer TFTs.
131 citations
TL;DR: In this article, the authors investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements.
Abstract: We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen, oxygen, air, or vacuum at room temperature during measurements. The threshold voltage and the drain current were changed by the ambient atmospheres. The threshold voltage shift (ΔVth) under gate-bias stress was faster in hydrogen than in oxygen and vacuum. It is suggested that hydrogen exposure degrades the gate-bias stress stability due to surface accumulation layer creation. The characteristic trapping times, τ, in H2, O2, air, and vacuum were 5×103, 1.5×104, 2×104, and 6.3×104 s, respectively.
131 citations