Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors

Abstract: The characteristics of glow‐discharge hydrogenated amorphous silicon‐silicon nitride (a‐Si:H/a‐SiNx:H) thin‐film transistors (TFTs) are reported for various deposition conditions. TFTs incorporating a N‐rich nitride gate dielectric, a‐SiN1.6:H, are superior to a‐Si:H TFTs with a Si‐rich gate nitride, a‐SiN1.2:H. In particular, the N‐rich gate nitride TFTs show considerably less interface or near‐interface charging during operation, improved stability, and a higher field‐effect mobility. The average field‐effect mobility μFE is found to be 0.27 and 0.41 cm2/V s for the Si‐ and N‐rich gate nitride TFTs, respectively. A further improvement in mobility, μFE =0.61 cm2/V s, is achieved by increasing the N‐rich gate nitride deposition temperature from 250 to 450 °C. These results suggest that N‐rich a‐SiNx:H, deposited at elevated temperatures, yields a more abrupt or ‘‘cleaner’’ a‐SiNx:H/a‐Si:H interface. We also show, for the first time, that using n+ μc‐Si:H source‐drain contacts in place of n+ a‐Si:H improve...

Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

Abstract: Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple approaches for fabricating collections of these elements, which we refer to as microstructured silicon (μs-Si), and for using spin-on dopants to introduce doped regions in them. Electrical and mechanical measurements of TFTs formed on plastic substrates with this doped μs-Si indicate excellent performance. These and other characteristics make the material potentially useful for emerging large area, flexible ‘macroelectronic’ devices.

12.2: A Conformable Electronic Ink Display using a Foil‐Based a‐Si TFT Array

Abstract: We have fabricated prototype lightweight electronic ink displays on a conformable active-matrix array sheet. The active matrix arrays were built using amorphous silicon thin film transistors and capacitors on a stainless steel foil substrate. These prototype displays possess a resolution of 40 dpi, with 52×64 pixels (active area 1.3 inch × 1.6 inch) on a 1.8 inch × 2.0 inch stainless steel substrate. The display possesses an ink on paper appearance, with wide-viewing angle and good contrast ratio.

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.

Abstract: Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm2/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm2/V·s and current density of ∼100 μA/μm at VDS = −2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the impr...

Semiconductor and fabrication method thereof

Abstract: A semiconductor device with p-channel and n-channel field effect devices formed on a common substrate, where the drain and source regions of the n-channel field effect device are formed within a silicon epitaxial layer formed on a silicon layer germanium relax which is formed on a silicon germanium buffer layer with a graduated germanium concentration. Additionally, drain and source regions of the p-channel field effect device are formed within a silicon-germanium compound layer formed on the substrate and the silicon epitaxial cap layer formed on the silicon-germanium compound layer.