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Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.


Papers
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Journal ArticleDOI
01 Sep 2014-Optik
TL;DR: In this article, a transparent nano composite PVA and PMMA-TiO2 thin films were prepared by an easy and cost effective dip coating method, which indicated that these films could be used in optoelectronic devices and in thin film transistors.

125 citations

Patent
18 Feb 2002
TL;DR: In this paper, a pixel current driver comprises a plurality of thin film transistors (TFTs) each having dual gates and for driving OLED layers, a top gate of the dual gates is formed between a source and a drain of each of the TFTs, to thereby minimize parasitic capacitance.
Abstract: A pixel current driver comprises a plurality of thin film transistors (TFTs) each having dual gates and for driving OLED layers. A top gate of the dual gates is formed between a source and a drain of each of the thin film transistors, to thereby minimize parasitic capacitance. The top gate is grounded or electrically tied to a bottom gate. The plurality of thin film transistors may be two thin film transistors formed in voltage-programmed manner or five thin film transistors formed in a current-programmed ΔVT-compensated manner. Other versions of the current-programmed circuit with different numbers of thin film transistors are also presented that compensate for δVT. The OLED layer are continuous and vertically stacked on the plurality of thin film transistors to provide an aperture ratio close to 100%.

124 citations

Journal ArticleDOI
TL;DR: In this article, the effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at.
Abstract: The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.

124 citations

Journal ArticleDOI
TL;DR: In this paper, the authors have fabricated and characterized ferroelectric-gate thin-film transistors (TFTs) using indium-tin-oxide (ITO) as a channel and ferronelectric Bi4−xLaxTi3O12 (BLT) as an insulator.
Abstract: We have fabricated and characterized ferroelectric-gate thin-film transistors (TFTs) using indium-tin-oxide (ITO) as a channel and ferroelectric Bi4−xLaxTi3O12 (BLT) as a gate insulator. We have obtained a typical n-channel transistor property with clear current saturation in drain current and drain voltage (ID–VD) characteristics. The obtained on∕off current ratio is more than 104 and the field-effect mobility is estimated 9.1cm2∕Vs. In particular, we demonstrate a large “on”-current of 2.5 mA in ITO∕BLT structure TFT in spite of the low channel mobility. This is because the ferroelectric film can induce large charge density due to the spontaneous polarization.

124 citations

Journal ArticleDOI
TL;DR: In this paper, an appropriately oriented dipole layer between contact and semiconductor in organic thin-film transistors (OTFTs) is proposed to improve charge injection by interposing an appropriate oriented dipoles layer between the contact and the semiconductor.

124 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023341
2022918
2021640
20201,333
20192,015
20182,080