Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport

Abstract: The structural and transport properties of evaporated pentacene organic thin film transistors (TFTs) are reported, and they show the influence of the deposition conditions with different inorganic dielectrics. Dielectrics compatible with large area fabrication were explored to facilitate low cost electronics on glass or flexible plastic substrates. X-ray diffraction and atomic force microscopy show a clear correlation between the morphology and the structure of the highly polycrystalline films for all dielectrics investigated. The roughness of the dielectric has a distinct influence on the morphology and the structural properties, whereas the films on smooth thermal oxide are in general highly ordered and independent of the deposition conditions. The ordered films exhibit a “thin film” and a bulk phase, and the bulk phase volume fraction increases with the deposition temperature and the film thickness. Careful control of the deposition conditions gives virtually identical films on thermal oxide and silico...

A single-atom transistor

Abstract: The ability to control matter at the atomic scale and build devices with atomic precision is central to nanotechnology. The scanning tunnelling microscope can manipulate individual atoms and molecules on surfaces, but the manipulation of silicon to make atomic-scale logic circuits has been hampered by the covalent nature of its bonds. Resist-based strategies have allowed the formation of atomic-scale structures on silicon surfaces, but the fabrication of working devices-such as transistors with extremely short gate lengths, spin-based quantum computers and solitary dopant optoelectronic devices-requires the ability to position individual atoms in a silicon crystal with atomic precision. Here, we use a combination of scanning tunnelling microscopy and hydrogen-resist lithography to demonstrate a single-atom transistor in which an individual phosphorus dopant atom has been deterministically placed within an epitaxial silicon device architecture with a spatial accuracy of one lattice site. The transistor operates at liquid helium temperatures, and millikelvin electron transport measurements confirm the presence of discrete quantum levels in the energy spectrum of the phosphorus atom. We find a charging energy that is close to the bulk value, previously only observed by optical spectroscopy.

Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

Abstract: Recently we have reported the room temperature fabrication of transparent and flexible thin film transistors on a polyethylene terephthalate (PET) film substrate using an ionic amorphous oxide semiconductor (IAOS) in an In2O3–ZnO–Ga2O3 system. These transistors exhibit a field effect mobility of ∼10 cm2 (V s)−1, which is higher by an order of magnitude than those of hydrogenated amorphous Si and pentacene transistors. This article describes a chemical design concept of IAOS, and its unique electron transport properties, and electronic structure, by comparing them with those of conventional amorphous semiconductors. High potential of IAOS for flexible electronics is addressed.