Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Liquid crystal display device and driving method thereof

Abstract: An LCD(Liquid Crystal Display) and a driving method thereof are provided to lower the transmittance at the low transmission rate, thereby forming the profile flatly. A liquid crystal is sealed between a pair of substrates. A gate bus line(12) is formed on a substrate. A data bus line(74) is crossed with the gate bus line by interposing an insulating layer between the data bus line and the gate bus line and has the predetermined gradation voltage. The first TFT(Thin Film Transistor) is formed in the neighborhood of the position crossed by the gate bus line and the data bus line. A gate electrode of the second TFT is connected with a source electrode of the first TFT. A pixel electrode(60) is connected with the source electrode of the second TFT. A driving voltage bus line(76) is connected with a drain electrode of the second TFT and receives the driving voltage for driving the liquid crystal. The first capacitance and resistor are connected in parallel to the source electrode of the first TFT.

High Performance Ambipolar Field‐Effect Transistor of Random Network Carbon Nanotubes

Abstract: Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

Thin film transistor and method of manufacturing the same

Abstract: Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

Thin film transistor array panel and a method for manufacturing the same

Abstract: Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.