Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this article, the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100-170°C) atomic layer deposition were reported.
Abstract: We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100–170°C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films grown at 100°C. Time of flight–secondary ions mass spectroscopy analysis revealed that this decrease is associated with an increase of the hydroxide groups in the ZnO layer which suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100°C exhibit a high Ion∕Ioff ratio (∼107) and an encouraging intrinsic channel mobility (∼1cm2∕Vs).
119 citations
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TL;DR: Flexible ammonia (NH3) gas sensors based on solution-processable organic thin-film transistors (OTFTs) are fabricated using a TIPS-pentacene active layer/PMMA dielectric layer on glass and plastic substrates.
Abstract: Flexible ammonia (NH3) gas sensors based on solution-processable organic thin-film transistors (OTFTs) are fabricated using a TIPS-pentacene active layer/PMMA dielectric layer on glass and plastic substrates. These OTFT sensors exhibit outstanding NH3 gas response and recovery characteristics under multiple exposure/evacuation cycles at controlled NH3 concentrations.
119 citations
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TL;DR: In this article, a composite ceramic ZnO target containing 1.5% ZnF 2 and 1.1% Al 2 O 3 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering.
119 citations
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TL;DR: In this article, a top-gate and bottom-gate amorphous ZnO TFTs of micrometer scales were implemented using fully lithographic and etching processes, achieving rather high field effect mobilities of 25 and 4cm2∕Vs and on-off current ratios of >107 and >106, respectively.
Abstract: Oxide-semiconductor-based thin-film transistors (TFTs), particularly the amorphous ones, are becoming an important emerging technology. Since oxide semiconductors easily form polycrystalline phases, usually more complicated oxide mixtures are needed for growing amorphous phases. In this letter, we report that by simply reducing the thickness, ZnO can be intentionally grown into the amorphous phase. Furthermore, both top-gate and bottom-gate amorphous ZnO TFTs of micrometer scales were effectively implemented using fully lithographic and etching processes. Rather high field-effect mobilities of 25 and 4cm2∕Vs and on∕off current ratios of >107 and >106 were achieved for top-gate and bottom-gate configurations, respectively.
119 citations
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10 Dec 2010TL;DR: In this article, a thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin-film transistor, are provided.
Abstract: A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
119 citations