Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V (-1) s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes.
Abstract: The present invention can realize an oxide insulating film having high permittivity and insulating properties at the same time, by controlling the precise thickness of a few nanometer scale by using a bar coating method using a very dilute solution of an oxide sol gel having a high dielectric constant. Also, it is possible to make a large area. A large-scale printing method includes a step of preparing a precursor solution, a step of supplying the precursor solution to the surface of a substrate, and a step of forming a layer, and a step of dying the layer.
117 citations
TL;DR: In this article, an organic thin film field effect transistors of water-soluble cationic and anionic phthalocyanine derivatives were successfully prepared using the layer-by-layer deposition technique.
Abstract: Organic thin film field effect transistors of water-soluble cationic and anionic phthalocyanine derivatives were successfully prepared using the layer-by-layer deposition technique. The alternating film growth and subsequent transistor properties were studied with a variety of techniques including ellipsometry, UV−vis spectroscopy, polarized UV−vis spectroscopy, AFM, and field effect transistor measurements. A stepwise and regular deposition of copper(II) phthalocyanine tetrakis(methyl pyridinium) chloride and copper(II) phthalocyanine tetrasulfonic acid, tetrasodium salt multilayers in both pure water and 0.03 M NaCl solution was observed. Differences in linear growth were observed between pure water and 0.03 M NaCl-based solutions. Polarized UV−vis spectra indicated that the conjugated phthalocyanine ring lies almost flat on the substrate surface with a random orientation within the plane of the substrate. Unusual “ambipolar” transistor-like behavior was found for the films that can be attributed to an ...
117 citations
TL;DR: In this article, the over-erase phenomenon in the polysiliconoxide-silicon nitride-oxide silicon (SONOS) memory structure is minimized by using hafnium oxide or ha fnium aluminum oxide to replace silicon nitride as the charge storage layer (the resulting structures are termed SOHOS devices, where the "H" denotes the high dielectric constant material instead of silicon Nitride).
Abstract: The over-erase phenomenon in the polysilicon-oxide-silicon nitride-oxide-silicon (SONOS) memory structure is minimized by using hafnium oxide or hafnium aluminum oxide to replace silicon nitride as the charge storage layer (the resulting structures are termed SOHOS devices, where the "H" denotes the high dielectric constant material instead of silicon nitride). Unlike SONOS devices, SOHOS structures show a reduced over-erase phenomenon and self-limiting charge storage behavior under both erase and program operations. These are attributed to the differences in band offset and the crystallinity of the charge storage layer.
117 citations
Patent•
03 Jan 1996
TL;DR: In this article, the authors show that the concentration of the metal element is low around the interface between the drain and the channel formation region, and when a reverse voltage is applied to the gate electrode, the leakage current is small.
Abstract: A highly reliable thin-film transistor (TFT) having excellent characteristics. A silicon film is grown laterally by adding a metal element such as nickel to promote crystallization. A crystal grain boundary is formed parallel to a gate electrode and around the center of the gate electrode. Thus, the grain boundary does not exist around the interface between the drain and the channel formation region. At this interface, a large stress is induced by a large electric field. The concentration of the metal element is low around the interface between the drain and the channel formation region. Therefore, the leakage voltage is small. Also, when a reverse voltage is applied to the gate electrode, the leakage current is small.
117 citations
117 citations