Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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Patent•
17 Jun 1992
TL;DR: In this paper, a semiconductor thin film formed over a substrate and having drain and source regions each being of a conductivity type and a channel region of another conductivity Type defined between the drain and the source regions, a gate electrode(s) formed over and/or below the channel region through an insulating layer(s), a pair of electrodes being connected to the source and drain regions of the semiconductor, in which said source region is placed in a self-aligned manner and adjoined to said channel region, while a drain-offered region is defined between
Abstract: A semiconductor thin film formed over a substrate and having drain and source regions each being of a conductivity type and a channel region of another conductivity type defined between the drain and source regions, a gate electrode(s) formed over and/or below the channel region of the semiconductor thin film through an insulating layer(s), a pair of electrodes being connected to the drain and source regions of the semiconductor thin film, in which said source region is placed in a self-aligned manner and adjoined to said channel region, while a drain-offset region is defined between said channel region and said drain region in a self-aligned manner.
115 citations
TL;DR: In this article, a solution-processed n-type organic thin-film transistors (OTFTs) based on C60 derivatives were used as a semiconducting layer, and the C60MC12-thin-film transistor showed high electron mobility of 0.067cm2∕Vs in saturation regime.
Abstract: We report the performance of solution-processed n-type organic thin-film transistors (OTFTs) based on C60 derivatives. Long-chain alkyl-substituted C60, C60-fused N-methylpyrrolidine-meta-C12 phenyl (C60MC12), was used as a semiconducting layer. The C60MC12-thin-film transistor shows high electron mobility of 0.067cm2∕Vs in saturation regime. From the result of x-ray diffraction analysis, the C60MC12 active layer forms highly ordered crystalline film. We found that self-assemble ability of long alkyl chains plays an important role for fabrication of highly ordered crystalline film, leading to achievement of high electron mobility in solution-processed n-type OTFTs.
115 citations
Patent•
23 Mar 1993
TL;DR: In this paper, the inverted stagger type thin-film transistor can be pre-processed using a gate insulating film with an impurity to form source, drain, and channel forming regions, and conducting a laser annealing to them.
Abstract: In an inverted stagger type thin-film transistor, the preparing process thereof can be simplified, and the unevenness of the thin film transistor prepared thereby can be reduced That is, disclosed is a preparing method which comprises selectively doping a semiconductor on a gate insulating film with an impurity to form source, drain, and channel forming regions, and conducting a laser annealing to them, or a preparing method which comprises selectively doping the semiconductor region with an impurity by a laser doping method
115 citations
TL;DR: In this paper, transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature were presented.
Abstract: The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlOx served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1V and an on/off ratio of ∼106 operated as a n-type enhancement mode with saturation mobility of 0.53cm2∕Vs. The devices showed optical transmittance about 80% in the visible range.
115 citations
Patent•
12 Sep 1983
TL;DR: In this paper, a gate oxide film is formed on a solid-phase epitaxy silicon thin film formed on quartz substrate, and a polycrystalline silicon gate electrode 2-5 is formed by patterning.
Abstract: PURPOSE: To turn a gate electrode into salicide, and reduce gate line resistance, by forming a high melting point metal film on a polycrystalline silicon gate electrode, and annealing the film. CONSTITUTION: After a gate oxide film is formed on a solid-phase epitaxy silicon thin film formed on a quartz substrate, a polycrystalline silicon film is deposited, and a polycrystalline silicon gate electrode 2-5 is formed by patterning. Impurities are ion-implanted, and a source region 3-6 and a drain region 3-7 are formed in a self-alignment manner. A high melting point metal film 3-9 is formed. The polycrystalline silicon gate electrode 2-5 is turned into salicide by annealing, and a salicide layer 3-10 is formed. By selectively eliminating the high melting point metal, a salicide gate electrode 3-12 is formed. After a contact hole is formed in an interlayer insulating film 3-13, a source electrode and a drain electrode are formed, and a thin film transistor whose gate line resistance is small is formed. COPYRIGHT: (C)1995,JPO
115 citations