Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
Papers published on a yearly basis
Papers
More filters
Patent•
07 Jun 1995
TL;DR: In this article, a thin-film transistor is described, which includes a gate electrode, a gate insulating film, an amorphous silicon film having impurities implanted therein to form source and drain regions as impurity regions, and a catalyst element introduced into the impurity region by adhering a coating containing the catalyst element or by means of ion doping and the like.
Abstract: A thin film transistor includes a crystallized amorphous silicon film having a gate insulating film and a gate electrode formed thereon. The device includes impurities implanted in a self-aligned manner and a catalyst that accelerates the crystallization of the silicon film. The catalyst is introduced in the silicon film by adhering a coating containing the catalyst element and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. The catalyst element can also be incorporated into the silicon film by means of ion implantation and the like. Also disclosed is a thin film transistor, which comprises a gate electrode, a gate insulating film, an amorphous silicon film having impurities implanted therein to form source and drain regions as the impurity regions, and a catalyst element introduced into the impurity regions by adhering a coating containing the catalyst element or by means of ion doping and the like, wherein the resulting structure is annealed at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
114 citations
TL;DR: In this paper, two organic thin-film transistors with SiO2 and ferroelectric PbZrTiO3 (PZT) gate insulator are compared and the fabrication of the devices is described and their electrical properties estimated.
Abstract: In this letter, two organic thin-film transistors with SiO2 and ferroelectric PbZrTiO3 (PZT) gate insulator are compared. The fabrication of the devices is described and their electrical properties estimated. The PZT-based devices show better performance: Low driving voltage, high Ion/Ioff ratio, etc. Moreover, a memory effect is reported in correlation with ferroelectric properties of PZT thin films.
114 citations
TL;DR: In this article, a procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described, using a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaN∕GaN single crystalline microstructures.
Abstract: A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaN∕GaN single crystalline microstructures—a so-called microstructured semiconductor ink—and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable—ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.
114 citations
Patent•
IBM1
TL;DR: In this paper, an organic semiconductor layer that is in contact with an inorganic mixed oxide gate insulator involving room temperature processing at up to 150 degrees C was presented. But the authors did not specify the process of laser ablation.
Abstract: The invention broadens the range of materials and processes that are available for Thin Film Transistor (TFT) devices by providing in the device structure an organic semiconductor layer that is in contact with an inorganic mixed oxide gate insulator involving room temperature processing at up to 150 degrees C. A TFT of the invention has a pentacene semiconductor layer in contact with a barium zirconate titanate gate oxide layer formed on a polycarbonate transparent substrate employing at least one of the techniques of sputtering, evaporation and laser ablation.
114 citations
Patent•
03 Nov 1993
TL;DR: In this paper, a method of making a thin film transistor for driving a liquid crystal display comprising the steps of forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate, and scanning laser beams on the surface of said amorphized silicon layer with the end portions of the respective scanned laser beams being overlapped.
Abstract: The present invention provides a method of making a thin film transistor for driving a liquid crystal display comprising the steps of forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode, and scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped. According to the method of making a thin film transistor for driving a liquid crystal display of the present invention, a thin film transistor suitable for HDTV, the field effect mobility of which is high, is achieved. Further, in making a thin film transistor, a separate processing step is not required and the number of processing steps can be reduced because constructional features of a TFT are utilized.
113 citations