Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this paper, the authors reviewed the recent advances in fundamental science of transparent amorphous oxide semiconductors and their application in thin-film transistors (TFTs) and placed emphasis on the view that high ionicity in chemical bonding and large spherical spread of unoccupied metal s orbitals in pblock metal oxides lead to the realization of electronic structures that are advantageous for n-channel TFT applications.
Abstract: Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10–50 cm2/Vs) and the absence of a Hall voltage sign anomaly, that are not seen in conventional amorphous semiconductors. This class of materials has been attracting much attention as a channel layer in thin-film transistors (TFTs) utilizing the above features along with the processing advantage that thin films can be deposited at low temperatures by conventional sputtering methods. The primary driving force for this trend is a rapidly emerging demand for backplane TFTs that can drive the next generation of flat-panel displays. This article reviews the recent advances in fundamental science of these materials and their TFT applications. Emphasis is placed on the view that high ionicity in chemical bonding and large spherical spread of unoccupied metal s orbitals in p-block metal oxides lead to the realization of electronic structures that are advantageous for n-channel TFT applications. Amorphous oxide semiconductors are compared with conventional hydrogenated amorphous silicon, which is used widely as the channel material for backplane TFTs in current liquid-crystal displays.
759 citations
TL;DR: Pentacene-based organic thin-film transistors (TFT's) with field effect mobility as large as 0.7 cm/sup 2/V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated as mentioned in this paper.
Abstract: Pentacene-based organic thin-film transistors (TFT's) with field-effect mobility as large as 0.7 cm/sup 2//V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated. Pentacene films deposited by evaporation at elevated temperature at low-to-moderate deposition rates have a high degree of molecular ordering with micrometer-sized and larger dendritic grains. Such films yield TFT's with large mobility. Films deposited at low temperature or by flash evaporation have small grains and poor molecular ordering and yield TFT's with low mobility.
754 citations
TL;DR: In this paper, the authors used X-ray diffraction rocking curves to provide direct evidence for highly oriented crystals at the critical buried interface between the polymer and the dielectric where the current flows in thin-film transistors.
Abstract: Thin films of polymer semiconductors are being intensively investigated for large-area electronics applications such as light-emitting diodes, photovoltaic cells and thin-film transistors. Understanding the relationship between film morphology and charge transport is key to improving the performance of thin-film transistors. Here we use X-ray diffraction rocking curves to provide direct evidence for highly oriented crystals at the critical buried interface between the polymer and the dielectric where the current flows in thin-film transistors. Treating the substrate surface with self-assembled monolayers significantly varies the concentration of these crystals. We show that the polymer morphology at the buried interface can be different from that in the bulk of the thin films, and provide insight into the processes that limit charge transport in polythiophene films. These results are used to build a more complete model of the relationship between chain packing in polymer thin-films and charge transport.
751 citations
TL;DR: In this article, a high electron mobility transistor (HEMT) with extremely high-speed microwave capabilities is reported, which is based on a field effect transistor (FE transistor).
Abstract: Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-AlxGa1-x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.
741 citations
TL;DR: In this article, the mechanics of film-on-foil transistors on steel and plastic foils have been discussed in the context of thin-film transistors, where the transistors function well after the foils are rolled to small radii of curvature.
Abstract: The mechanics of film-on-foil devices is presented in the context of thin-film transistors on steel and plastic foils Provided the substrates are thin, such transistors function well after the foils are rolled to small radii of curvature When a substrate with a lower elastic modulus is used, smaller radii of curvature can be achieved Furthermore, when the transistors are placed in the neutral surface by sandwiching between a substrate and an encapsulation layer, even smaller radii of curvature can be attained Transistor failure clearly shows when externally forced and thermally induced strains add to, or subtract from, each other
722 citations