Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the preparation of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via thermal processing of solution-deposited precursor thin films in air is reported.
Abstract: Stable, solution-processed, non-toxic, high-mobility thin-film semiconductors are required for fabricating low-cost thin-film transistor (TFT) arrays and circuits to enable ubiquitous large-area and ultra low-cost electronics. Most thin-film semiconductors reported to date have been unable to meet the mobility, stability, safety, and cost requirements for this emerging technology, thus precluding their adoption in practical applications. Here, we report the preparation of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via thermal processing of solution-deposited precursor thin films in air. The process conditions influence the performance of the TFTs. By optimizing the fabrication conditions, the prepared ZnO thin-film semiconductor has a well-controlled, preferential crystal orientation and densely packed ZnO crystals, exhibiting excellent field-effect performance characteristics with mobility far exceeding those of hydrogenated amorphous silicon (a-Si:H). Consistently reproducible mobility ∼5–6 cm2V−1s−1 and current on-to-off ratio ∼105–106 have been obtained, while the production cost was controlled as low as possible. This potentially opens up application opportunities inaccessible by a-Si:H technology and renders otherwise costly large-area electronics affordable.
107 citations
Patent•
29 Sep 1986
TL;DR: In this article, an insulated gate field effect transistor is constructed by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate with the gate electrode functioning as a mask to selectively crystallize the source and drain regions.
Abstract: A method of manufacturing an insulated gate field effect transistor by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate where the semiconductor film includes hydrogen or fluoride, forming a gate insulating film on part of the semiconductor film to be the gate region, forming a gate electrode on the insulating film, inverting the conductivity type of the part of the conductor film to be the source and grain regions by ion doping of impurity corresponding to the second conductivity type opposite to the first conductivity type with the gate electrode functioning as a mask, and then exposing the non-single-crystalline semiconductor film to illumination with the gate electrode functioning as a mask to selectively crystallize the source and drain regions.
107 citations
Patent•
[...]
TL;DR: In this paper, a thin-film transistor having a source zone (10), a drain zone (11), and a channel zone (9), and also a source electrode (15, a drain electrode (16) and a gate electrode (13), has been extended so as to cover the channel zone and thereby prevent the entry of light into the channel Zone (9) and the generation of a light-induced current associated therewith.
Abstract: In a thin-film transistor having a source zone (10), a drain zone (11) and a channel zone (9), and also a source electrode (15), a drain electrode (16) and a gate electrode (13), the source electrode (15) or the drain electrode (16) has been extended so as to cover the channel zone (9) and thereby prevent the entry of light into the channel zone (9) and the generation of a light-induced current associated therewith.
107 citations
TL;DR: In this paper, a conductive ink containing silver nanoparticles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing was used for a direct metal printing.
106 citations
TL;DR: The history of the transistor was traced from early and unsuccessful Bell Labs experiments, through its brief resurgence in the 1960's as a competitor to the MOSFET, its second disappearance from public view followed by years of hibernation at Westinghouse Labs, its emergence in the 1970's, as a candidate for forming very large area integrated circuits for flat panel displays, leading to the present era of intensive, worldwide exploitation as a device which has at last found a suitable problem to solve as mentioned in this paper.
Abstract: The thin film transistor was the first solid-state amplifier ever patented, but has found no practical application until quite recently. The history of this device is traced from the early and unsuccessful Bell Labs experiments, through its brief resurgence in the 1960's as a competitor to the MOSFET; its second disappearance from public view followed by years of hibernation at Westinghouse Labs; its emergence in the 1970's as a candidate for forming very large area integrated circuits for flat panel displays, leading to the present era of intensive, worldwide exploitation as a device which has at last found a suitable problem to solve. The present state of the art of TFT's made of CdSe, poly- and amorphous silicon is reviewed, particularly as it pertains to their current predominant use in high resolution/high performance liquid crystal displays, followed by some views on the future for TFT's in active matrices and, possibly, in other "human size" or macro-electronic components and systems.
106 citations