Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Semiconductor device and method for forming the same

Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3

Semiconductor device, its manufacturing method, and electronic device

Abstract: A thin film transistor (1) wherein a gate electrode (3) is formed on an insulative substrate (2), a gate insulating layer (4) is formed on the gate electrode (3), a semiconductor layer (5) is formed on the gate insulating layer (4), a source electrode (6) and a drain electrode (7) are formed on the semiconductor layer (5), and a protective layer (8) covering them are formed. The semiconductor layer (5) is isolated from the atmosphere. The semiconductor layer (5) (active layer) is formed of a ZnO polycrystalline semiconductor doped with, for example, a group V element. Since the surface state of the ZnO semiconductor is reduced thanks to the protective layer (8) and inward expansion of the depletion layer is prevented, the ZnO semiconductor is of an n-type showing its intrinsic resistance value and contains excessive free electrons. The added element acts as acceptor impurities in the ZnO semiconductor, decreasing the excessive electrons. Thus the gate voltage to eliminate the excessive free electrons lowers, thereby making the threshold voltage around 0 V. A semiconductor device using a zinc oxide for an active layer and having a protective layer for isolating the active layer from the atmosphere can be actually used.

A hydrogen−sensitive MOS field−effect transistor

Abstract: An MOS transistor in silicon with 10−nm silicon dioxide as gate insulator and 10−nm palladium as gate electrode was fabricated. The threshold voltage of this transistor was found to be a function of the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C it was possible to detect 40 ppm hydrogen gas in air with response times less than 2 min.

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Abstract: Organic vapor phase deposition was used to grow polycrystalline pentacene channel thin-film transistors. Substrate temperature, chamber pressure during film deposition, and growth rate were used to vary the crystalline grain size of pentacene films on O2-plasma treated SiO2 from 0.2 to 5 μm, leading to room-temperature saturation regime field-effect hole mobilities (μeff) from 0.05±0.02 to 0.5±0.1 cm2/V s, respectively. Surface treatment of SiO2 with octadecyltrichlorosilane (OTS) prior to pentacene deposition resulted in μeff⩽1.6 cm2/V s, and drain current on/off ratios of ⩽108 at room temperature, while dramatically reducing the average grain size. X-ray diffraction studies indicate that the OTS treatment decreases the order of the molecular stacks. This suggests an increased density of flat-lying molecules, accompanying the improvement of the hole mobility at the pentacene/OTS interface.

Organic light-emitting display device

Abstract: An organic light-emitting display device includes: a substrate; a driving thin film transistor on the substrate; and a DAM at an outermost portion of the substrate, where the DAM includes an inorganic layer and includes a first metallic DAM. The first metallic DAM may include two or more metal layers spaced apart at a set interval.