Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

Abstract: A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane-terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic-oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS-coupled SiO2 or AlOx dielectrics, various vacuum- and solution-processable organic semiconductors can develop highly ordered crystalline structures that provide higher field-effect mobilities (μFETs) than other surface-modified systems, and negligible hysteresis in organic field-effect transistors (OFETs). In particular, the use of PS-coupled AlOx nanodielectrics enables a solution-processable triethylsilylethynyl anthradithiophene OFET to operate with μFET ∼ 1.26 cm2 V−1 s−1 at a gate voltage below –1 V. In addition, a complementary metal-oxide semiconductor-like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS-coupled SiO2 dielectric.

Thin film transistor substrate and display device

Abstract: Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.

Single-Layer Pentacene Field-Effect Transistors Using Electrodes Modified With Self-assembled Monolayers

Abstract: Pentacene field-effect transistor performance can be improved by modifying metal electrodes with self-assembled monolayers. The dominant role in performance is played by pentacene morphology rather than the work function of the modified electrodes. With optimized processing conditions, hysteresis-free transfer curves with very small switch-on voltages are obtained for single-monolayer pentacene active channels.

Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition

Abstract: Transparent ZnO thin film transistor (TFT) array of 176 X 144 (106 dpi) was fabricated on glass substrate. The V th of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm 2 /V s. The active layer (ZnO), gate insulator (Al 2 O 3 ), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode.

High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

Abstract: Thin-film transistors (TFTs) based on amorphous indium gallium zinc oxide (a-IGZO) were fabricated by radio-frequency magnetron sputtering on glass substrates. The TFT device structure was a bottom-gate type, consisting of indium zinc oxide and HfO 2 as electrodes (gate, source, and drain) and gate dielectric, respectively. The resistivity of the a-IGZO channel layer was ∼1 Ω cm. TFTs with a 6 μm gate length and 100 μm gate width displayed a saturation mobility of ∼7.2 cm 2 V -1 s -1 , a threshold voltage of 0.44 V, a drain current on-off ratio of ∼10 5 , and subthreshold gate-voltage swing of ∼ 0.25 V decade -1 . After 1000 h aging time at room temperature, the saturation mobility remained almost constant while the threshold voltage shift was as small as 460 mV. The IGZO TFTs based on HfO 2 gate dielectrics sputtered near room temperature were found to be good candidates for applications on organic flexible substrates.