Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this article, two different types of all-organic, transparent transistors, namely Organic Thin Film Transistors (OTFTs) and Organic Electrochemical Transistors, were fabricated on transparent, flexible plastic substrates by means of inkjet printing, where the source, drain and gate electrodes were inkjet printed using poly(3,4ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS ) solution, while a thermally sublimated layer of Parylene C acted as gate dielectric.
102 citations
Patent•
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02 Sep 2005
TL;DR: In this paper, the authors used a silicon nitride film, which can be formed by plasma enhanced chemical vapor deposition (PCVD), as a gate insulating film in a thin film transistor having a top gate structure and using an oxide semiconductor thin film mainly composed of zinc oxide ZnO.
Abstract: PROBLEM TO BE SOLVED: To use a silicon nitride film, which can be formed by plasma enhanced chemical vapor deposition (PCVD), as a gate insulating film in a thin film transistor having a top gate structure and using an oxide semiconductor thin film mainly composed of zinc oxide ZnO While using the gate insulating film as a two-layer structure, by adjusting the nitrogen concentration and hydrogen concentration of each insulating film, the zinc oxide (ZnO) semiconductor thin film was protected from reduction and the generation of leakage current was suppressed And thin film transistors with high current drive capability A top gate type thin film transistor having a semiconductor thin film layer made of an oxide mainly composed of zinc oxide ZnO and a gate insulating film made of silicon nitride (SiNx), wherein the gate insulating film is the semiconductor thin film layer A first gate insulating film covering at least the upper surface of the first gate insulating film, and a second gate insulating film covering at least the side surfaces of the first gate insulating film and the semiconductor thin film, and the first gate insulating film and the second gate insulating film A thin film transistor, wherein the film is made of silicon nitride (SiNx) having a different composition [Selection] Figure 1
102 citations
Patent•
22 May 2015
TL;DR: In this article, an organic light-emitting diode display (LED) was used to remove a base film by attaching a barrier layer on a phase difference film by interposing only the planarization layer.
Abstract: The present invention relates to an organic light emitting diode display device and a manufacturing method thereof, capable of removing a base film by attaching a barrier layer on a phase difference film. The organic light emitting diode display device according to the present invention includes a substrate on which a thin film transistor is formed, an organic light emitting cell which is formed on the substrate and is connected to the thin film transistor, a protection layer which covers the organic light emitting cell, and an antireflection part which is formed on the protection layer and includes a phase difference film and a polarization film which are successively laminated, and a barrier layer which is formed between the protection layer and the antireflection part and is formed on the rear side of the phase difference film by interposing only the planarization layer.
102 citations
Patent•
22 Nov 2010TL;DR: In this paper, a TFT array panel including a substrate, a gate line having a gate electrode, gate insulating layer formed on the gate line, a data line with a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed between the data line and the drain electrode, and a pixel electrode connected to the drain electrodes is provided.
Abstract: A TFT array panel including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.
102 citations
TL;DR: In this article, the influence of the photon energy on the optoelectronic properties presented by n-type bottom-gate thin-film transistors based on indium zinc oxide was shown.
Abstract: Insensitivity to light irradiation is desirable for conventional applications of thin-film transistors, i.e., the active matrices of displays. However, if one produces a device presenting controlled sensitivity to light, many other applications can benefit or can even be created. In this work it is shown the influence of the photon energy on the optoelectronic properties presented by n-type bottom-gate thin-film transistors based on indium zinc oxide. In the dark, the devices present very good electrical properties, working in the enhancement mode, exhibiting on–off ratios higher than 10 7 and channel mobility above 30 cm 2 /V s. Remarkable results were achieved when the devices were exposed to light radiation, the most striking one is the possibility to switch between enhancement (in the dark) and depletion (illuminated) modes, with different threshold voltages and on/off ratios, function of the light power density and wavelength used. This type of behavior permits to design circuits where one can have the same transistor working either in the enhancement or depletion modes, function of the light beam and intensity impinging on it, highly important for short wavelength detector applications.
102 citations