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Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.


Papers
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Journal ArticleDOI
TL;DR: In this article, N,N,N′-dioctyl-3,4,9,10,10 perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field effect transistors.
Abstract: N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors Mobilities up to 06 cm2 V−1 s−1 and current on/off ratios >105 were obtained Linear regime mobilities were typically half of those measured in the saturation regime X-ray studies in reflection mode suggest a spacing of ∼20 A for thin evaporated films of PTCDI-C8H, which is consistent with the value of ∼21±2 A obtained from our simulations when an interdigitated packing structure is assumed

451 citations

Journal ArticleDOI
TL;DR: In this paper, a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic layer-deposited (ALD) Al2O3 as the gate dielectric is presented.
Abstract: We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a conventional GaN high-electron-mobility-transistor (HEMT) of similar design, the MOS-HEMT exhibits several orders of magnitude lower gate leakage and several times higher breakdown voltage and channel current. This implies that the ALD Al2O3∕AlGaN interface is of high quality and the ALD Al2O3∕AlGaN∕GaN MOS-HEMT is of high potential for high-power rf applications. In addition, the high-quality ALD Al2O3 gate dielectric allows the effective two-dimensional (2D) electron mobility at the AlGaN∕GaN heterojunction to be measured under a high transverse field. The resulting effective 2D electron mobility is much higher than that typical of Si, GaAs or InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs).

451 citations

Journal ArticleDOI
M.J. Powell1
TL;DR: In this paper, the basic physics underlying the operation and key performance issues of amorphous-silicon thin-film transistors are discussed, and the transistors also show longer time threshold voltage shifts due to two distinct mechanisms: charge trapping in the silicon nitride gate insulator and metastable dangling bond state creation.
Abstract: The basic physics underlying the operation and key performance issues of amorphous-silicon thin-film transistors (TFTs) are discussed. The static transistor characteristics are determined by the localized electronic states that occur in the bandgap of the amorphous silicon. The deep states, mostly consisting of Si dangling bonds, determine the threshold voltage, and the conduction band-tail states determine the field-effect mobility. The finite capture and emission times of the deep localized states lead to a dynamic transistor characteristic that can be described by a time-dependent threshold voltage. The transistors also show longer time threshold voltage shifts due to two other distinct mechanisms: charge trapping in the silicon nitride gate insulator and metastable dangling bond state creation in the amorphous silicon. These two mechanisms show characteristically different bias, temperature, and time dependencies of the threshold voltage shift. Illumination of a TFT causes the generation of electron-hole pairs in the space-charge region leading to a steady-state equal flux of electrons and holes and a reduction in the band-bending. In most applications, the photosensitivity should be minimized. The uniformity of large arrays of transistors for display applications is excellent, with variations in the threshold voltage of 0.5-1.0 V. >

449 citations

Patent
Satoshi Inoue1, Tatsuya Shimoda1
10 Jul 1998
TL;DR: In this article, a method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device, where an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed.
Abstract: A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed. Further, the original substrate is separated by exfoliation to transfer the device to a transfer material to cause the pixel electrodes to partially appear in the surface or the vicinity of the surface of the device. This portion permits application of a voltage to a liquid crystal through the pixel electrode.

445 citations

Journal ArticleDOI
TL;DR: The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species and the patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere.
Abstract: Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

442 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023341
2022918
2021640
20201,333
20192,015
20182,080