Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this paper, various methods for organic semiconductor deposition are reviewed, and recent progress in printing and patterning of OTFTs are surveyed, as well as their application in future plastic electronic devices.
Abstract: Organic thin film transistors (OTFTs) will play an important role in future plastic electronic devices. The device performance is greatly affected by the molecular structure and morphology of the organic semiconductors. Various methods for organic semiconductor deposition are reviewed. Recent progress in printing and patterning of OTFTs are also surveyed.
407 citations
TL;DR: In this article, a donor-acceptor polymer semiconductor (PDPP-TBT) was proposed for low-bandgap OTFTs with balanced hole and electron mobilities of 0.35 cm2 V1s-1 and 0.40 cm 2 V-1s -1, respectively.
Abstract: A new, solution-processable, low-bandgap, diketopyrrolopyrrole- benzothiadiazole-based, donor-acceptor polymer semiconductor (PDPP-TBT) is reported. This polymer exhibits ambipolar charge transport when used as a single component active semiconductor in OTFTs with balanced hole and electron mobilities of 0.35 cm2 V-1s-1 and 0.40 cm 2 V-1s-1, respectively. This polymer has the potential for ambipolar transistor-based complementary circuits in printed electronics.
406 citations
TL;DR: In this article, high mobility, n-type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO) channel layer are reported, which have excellent drain current saturation, peak incremental channel mobilities of 45-55cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.8V∕decade.
Abstract: High mobility, n-type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO) channel layer are reported. Such devices are highly transparent with ∼85% optical transmission in the visible portion of the electromagnetic spectrum. ZIO TTFTs annealed at 600 °C operate in depletion-mode with threshold voltages −20 to −10V and turn-on voltages ∼3V less than the threshold voltage. These devices have excellent drain current saturation, peak incremental channel mobilities of 45–55cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.8V∕decade. In contrast, ZIO TTFTs annealed at 300 °C typically operate in enhancement-mode with threshold voltages of 0–10V and turn-on voltages 1–2V less than the threshold voltage. These 300 °C devices exhibit excellent drain–current saturation, peak incremental channel mobilities of 10–30cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.3V∕decade. ZIO TTFTs with the channel layer deposited ne...
405 citations
405 citations
TL;DR: The microstructured silicon (μs-Si) as mentioned in this paper is a type of material that can be deposited and patterned onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties.
Abstract: Free-standing micro- and nanoscale objects of single crystal silicon can be fabricated from silicon-on-insulator wafers by lithographic patterning of resist, etching of the exposed top silicon, and removing the underlying SiO2 to lift-off the remaining silicon. A large collection of such objects constitutes a type of material that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties. Effective mobilities of devices built with this material, which we refer to as microstructured silicon (μs-Si), are demonstrated to be as high as 180cm2∕Vs on plastic substrates. This form of “top down” microtechnology might represent an attractive route to high performance flexible electronic systems.
404 citations