Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

"Cut and stick" rubbery ion gels as high capacitance gate dielectrics.

Abstract: A free-standing polymer electrolyte called an ion gel is employed in both organic and inorganic thin-film transistors as a high capacitance gate dielectric. To prepare a transistor, the free-standing ion gel is simply laid over a semiconductor channel and a side-gate electrode, which is possible because of the gel's high mechanical strength.

Polysilicon TFT technology for active matrix OLED displays

Abstract: The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which are important in achieving bright and uniform displays. Rapid thermal processing has been incorporated to achieve uniform polysilicon microstructure, along with silicides to reduce parasitic source and drain series resistance. Using these processes, TFT drain current nonuniformity has been reduced below 5% for 90% of the devices. This work also introduces transition metals to produce low resistance contacts to ITO and to eliminate hillock formation in the aluminum metallization. These processes, along with spin on glasses for planarization, have been used to produce functional active matrix arrays for OLED displays. The final array pixel performance is also presented.

Nanowire Transistor Performance Limits and Applications

Abstract: Semiconductor nanowires represent unique materials for exploring phenomena at the nanoscale. Developments in nanowire growth have led to the demonstration of a wide range of nanowire materials with precise control of composition, morphology, and electrical properties, and it is believed that this excellent control together with small channel size could yield device performance exceeding that obtained using top-down techniques. Here, we review advances in chemically synthesized semiconductor nanowires as nanoelectronic devices. We first introduce basic nanowire field-effect transistor structures and review results obtained from both p- and n-channel homogeneous composition nanowires. Second, we describe nanowire heterostructures, show that by using nanowire heterostructures, several limiting factors in homogeneous nanowire devices can be mitigated, and demonstrate that nanowire transistor performance can reach the ballistic limit and exceed state-of-the-art planar devices. Third, we discuss basic methods for organization of nanowires necessary for fabricating arrays of device and circuits. Fourth, we introduce the concept of crossbar nanowire circuits, discuss results for both transistor and nonvolatile switch devices, and describe unique approaches for multiplexing/demultiplexing enabled by synthetically coded nanowire. Fifth, we discuss the unique application of thin-film nanowire transistor arrays on low-cost substrates and illustrate this with results for relatively high-frequency ring oscillators and completely transparent device arrays. Finally, we describe 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowires within a bottom-up approach.

Polymer thin-film transistors with chemically modified dielectric interfaces

Abstract: The characteristics of polymeric thin-film transistors can be controlled by chemically modifying the surface of the gate dielectric prior to the deposition of the organic semiconductor. The chemical treatment consists of derivatizing the silicon oxide surface with organic trichlorosilanes to form self-assembled monolayers (SAMs). The deposition of an octadecyltrichlorosilane SAM leads to a mobility of 0.01–0.02 cm2/V s in a polyfluorene copolymer, a 20-fold improvement over the mobility on bare silicon oxide. The mobility enhancement mechanism is likely to involve molecular interactions between the polymer and the SAM.