Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this paper, a single organic thin-film field effect transistor (FET) was integrated with an organic light-emitting diode to achieve a luminance of ∼2300cd/m2.
Abstract: The fabrication and characteristics of organic smart pixels are described. The smart pixel reported in this letter consists of a single organic thin-film field effect transistor (FET) monolithically integrated with an organic light-emitting diode. The FET active material is a regioregular polythiophene. The maximum optical power emitted by the smart pixel is about 300 nW/cm2 corresponding to a luminance of ∼2300 cd/m2.
372 citations
TL;DR: In this paper, the use of discrete organic compounds as active materials in discrete transistors is described, beginning with α-sexithiophene (α-6T) and progressing to other thiophene oligomers and nonthiophene semiconductors.
Abstract: The use of discrete organic compounds as active materials in
transistors is described, beginning with α-sexithiophene
(α-6T) and progressing to other thiophene oligomers and nonthiophene
semiconductors. Device operation, molecular design, synthesis, film
morphology and transport of holes and electrons are covered.
368 citations
Patent•
12 Jul 2000
TL;DR: In this paper, a method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface, forming on the surface of the silicon substrate, by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by ALD, one or more layers of a high dielectric constant oxide (40) on the seed layer.
Abstract: A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').
368 citations
TL;DR: In this article, the authors quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of the effect of roughness on the performance of organic thin-film transistors.
Abstract: The properties of the dielectric strongly influence the performance of organic thin-film transistors. In this letter, we show experimental results that quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of it. We consider the movement of charge carriers out of the “roughness valleys” or across those valleys at the dielectric–semiconductor interface as the limiting step for the roughness-dependent mobility in the transistor channel.
367 citations
TL;DR: In this paper, it was shown that when a pentacene thin-film transistor is exposed to humidity, its saturation current decreases and can therefore be used to measure the amount of relative humidity in atmosphere.
Abstract: When a pentacene thin-film transistor is exposed to humidity, its saturation current decreases. This decrease was found to be reversible and can therefore be used to measure the amount of relative humidity in atmosphere. The sensitivity was found to depend on the thickness of the pentacene layer. The microscopic origin of the sensing mechanism is discussed.
366 citations