Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review

Abstract: Organic thin film transistor (OTFT) based device modeling and circuit application is a rapidly emerging research area. Taking cognizance of this fact, our paper reviews various basic to advanced OTFT structures, their performance parameters, materials of individual OTFT layers, their molecular structures, OTFT charge transport phenomena, and fabrication techniques. The performance of p- and n-type conducting polymer and small molecule organic semiconductors are reviewed primarily in terms of field effect mobility, current on/off ratio, and operating voltage for various OTFT structures. Moreover, different organic/inorganic materials for realizing the dielectric layer, electrodes, and the substrate in an OTFT are analyzed. Some of the compact models that are essential for predicting and optimizing the device performance are described that takes into account the mobility enhancement factor and channel length modulation. A detailed study of the single gate, dual gate, vertical channel, and cylindrical gate O...

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

Abstract: The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V ldr s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

Low voltage blue-phase liquid crystal displays

Abstract: A protrusion electrode structure is proposed to dramatically lower the operation voltage of the emerging blue-phase liquid crystal displays (BP-LCDs). Simulation results indicate that the generated horizontal electric field is not only strong but also penetrates deeply into the bulk LC layer. As a result, a low voltage (∼10 Vrms) and reasonably high transmittance (∼70%) BP-LCD can be achieved. This approach enables the BP-LCDs to be addressed by amorphous silicon thin-film transistors (TFTs). Widespread application of TFT BP-LCDs is foreseeable.

Oligofluorene−Thiophene Derivatives as High-Performance Semiconductors for Organic Thin Film Transistors

Abstract: A series of alkyl chain end-capped oligofluorene−thiophenes have been prepared with high yields using Suzuki or Stille coupling reactions. The electronic and optical properties of the thin films deposited at different substrate temperatures have been investigated. Morphological studies using transmission electron microscopy (TEM) revealed well-interconnected microcrystalline domains in these thin films. X-ray diffraction measurements of the vacuum-evaporated films showed enhanced crystalline order with increasing substrate deposition temperature. Thermal analysis as well as electrochemical measurements of the materials indicated that the new oligomers have high thermal and oxidative stability. Highly ordered polycrystalline vacuum-evaporated films with charge carrier mobility as high as 0.12 cm2 V-1 s-1 have been achieved with 5,5‘-bis(7-hexyl-9H-fluoren-2-yl)-2,2‘-bithiophene (DHFTTF). Thin film field-effect transistor (TFT) devices made from these materials showed remarkable stability even after UV (366...

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Abstract: P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈1016–1018 cm−3; electrical resistivity between 101–102 Ω cm; Hall mobility around 4.8 cm2/V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2/V s and an ON/OFF modulation ratio of 103.