Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
Papers published on a yearly basis
Papers
More filters
TL;DR: A terthiophene-based quinodimethane, 3.47 and 3.63 A, was synthesized and crystallized in this paper, which is a planar quinoid geometry with dicyanomethylene groups at each end of the molecule.
Abstract: A terthiophene-based quinodimethane, 3‘,4‘-dibutyl-5,5‘ ‘-bis(dicyanomethylene)-5,5‘ ‘-dihydro-2,2‘:5‘,2‘ ‘-terthiophene (1) was synthesized and crystallized. Compound 1 has a planar quinoid geometry that is stabilized by dicyanomethylene groups at each end of the molecule. In the crystal each molecule is part of a dimerized face-to-face π-stack, with intermolecular spacings of 3.47 and 3.63 A, respectively. Cyclic voltammetry showed that 1 could be reversibly reduced and oxidized in methylene chloride solution. Thin film transistors (TFTs) were prepared by vacuum evaporation of 1 onto SiO2(300 nm)/Si substrates, followed by evaporation of Ag source and drain contacts. The doped Si substrate served as the gate electrode. X-ray diffraction and atomic force microscopy indicate the films are polycrystalline, with the long axes of the molecules approximately perpendicular to the substrate. The TFT measurements revealed n-channel conduction in films of 1, with room-temperature electron field effect mobilities ...
261 citations
TL;DR: In this article, the current-voltage relation for the contact from the transistor output characteristics measured with different channel lengths was derived from the contact injection properties of the metal Schottky barrier.
Abstract: Polymer thin film transistors based on the polyfluorene F8T2 exhibit a nonohmic contact resistance, particularly when in the coplanar device geometry. We show how to obtain the current–voltage relation for the contact from the transistor output characteristics measured with different channel lengths. The diode-type relation is attributed to the contact injection properties of the metal Schottky barrier. No significant increase in mobility with gate or drain field is observed.
261 citations
TL;DR: In this paper, the authors report methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs.
Abstract: We report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.
259 citations
TL;DR: It is concluded that the role of the fluorine functionalization in the air-stable n-channel operation of the transistors is different than previously thought.
Abstract: Five core-cyanated perylene carboxylic diimides end-functionalized with fluorine-containing linear and cyclic substituents have been synthesized and employed in the fabrication of air-stable n-channel organic thin-film field-effect transistors with carrier mobilities up to 0.1 cm 2 /Vs. The relationships between molecular structure, thin-film morphology, substrate temperature during vacuum deposition, transistor performance, and air stability have been investigated. Our experiments led us to conclude that the role of the fluorine functionalization in the air-stable n-channel operation of the transistors is different than previously thought.
257 citations
TL;DR: In this article, the state-of-the-art of metal oxide thin-film transistors (TFTs) is discussed, including the exploration of new channel materials, the realization of low-resistance ohmic contacts and the implementation of high-k dielectric materials as the gate insulator.
Abstract: The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is addressed, including the exploration of new channel materials, the realization of low-resistance ohmic contacts and the implementation of high-k dielectric materials as the gate insulator. The electrical instability of the oxide TFTs is also discussed, which is critical for their application in flexible backplane electronics: special attention is given to the understanding of the degradation mechanism of oxide TFTs against bias thermal stress (BTS) and light illuminated BTS. Finally, the recent application of oxide TFTs in active matrix displays, such as electronic paper, liquid crystal displays and organic light-emitting diodes, is addressed.
256 citations