Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Transparent Nanopaper-Based Flexible Organic Thin-Film Transistor Array

Abstract: Eco-friendly and low-cost cellulose nanofiber paper (nanopaper) is a promising candidate as a novel substrate for flexible electron device applications. Here, a thin transparent nanopaper-based high-mobility organic thin-film transistor (OTFT) array is demonstrated for the first time. Nanopaper made from only native wood cellulose nanofibers has excellent thermal stability (>180 °C) and chemical durability, and a low coefficient of thermal expansion (CTE: 5–10 ppm K-1). These features make it possible to build an OTFT array on nanopaper using a similar process to that for an array on conventional glass. A short-channel bottom-contact OTFT is successfully fabricated on the nanopaper by a lithographic and solution-based process. Owing to the smoothness of the cast-coated nanopaper surface, a solution processed organic semiconductor film on the nanopaper comprises large crystalline domains with a size of approximately 50–100 μm, and the corresponding TFT exhibits a high hole mobility of up to 1 cm2V-1 s-1 and a small hysteresis of below 0.1 V under ambient conditions. The nanopaper-based OTFT also had excellent flexibility and can be formed into an arbitrary shape. These combined technologies of low-cost and eco-friendly paper substrates and solution-based organic TFTs are promising for use in future flexible electronics application such as flexible displays and sensors.

Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

Abstract: The electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. The band tail state slope controls the field effect mobility, while the average spatial coherence length and potential fluctuation control percolation conduction. In these limits, the field effect mobility is found to follow a power law, from which a universal mobility versus carrier concentration dependence is extracted.

Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates

Abstract: A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed at temperatures that do not exceed 600° C. By patterning the deposition of the nucleating site forming material on the glass substrate, the subsequently deposited amorphous film can be selectively crystallized only in areas in contact with the nucleating-site forming material.

Solution-processable metal oxide semiconductors for thin-film transistor applications

Abstract: In this review, we discuss the merits of solution-processed metal oxide semiconductors and consider their application in thin-film transistors for large-area electronics.