Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

Abstract: We report an improvement in performance of C60 thin-film field-effect transistors (TFTs) fabricated by molecular-beam deposition. Devices, fabricated and characterized under a high vacuum without exposure to air, routinely showed current on/off ratios >108 and field-effect mobilities in the range of 0.5–0.3 cm2/V s. The mobility obtained is close to that derived from the photocurrent measurements on C60 thin films and comparable to a very high value among n-type organic TFTs.

Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

Abstract: We reported on a two-dimensional simulation of electrical properties of the radio frequency (rf) sputter amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFT used in this work has the following performance: field-effect mobility (μeff) of ∼12 cm2/V s, threshold voltage (Vth) of ∼1.15 V, subthreshold swing (S) of ∼0.13 V/dec, and on/off ratio over 1010. To accurately simulate the measured transistor electrical properties, the density-of-states model is developed. The donorlike states are also proposed to be associated with the oxygen vacancy in a-IGZO. The experimental and calculated results show that the rf sputter a-IGZO TFT has a very sharp conduction band-tail slope distribution (Ea=13 meV) and Ti ohmic-like source/drain contacts with a specific contact resistance lower than 2.7×10−3 Ω cm2.

Flexible organic thin-film transistors with silk fibroin as the gate dielectric.

Abstract: radio-frequency identifi cation (RFID) tags, [ 4,5 ] and biosensors. [ 6,7 ] OTFTs usually exhibit very low switching speed and are diffi cult to use instead of inorganic thin-fi lm transistors (TFTs), although they possess the merits of fl exibility and low cost. Several challenges for OTFTs of large area are high fi eld-effect mobility ( μ FE ), low operating voltage, and solution processing. The μ FE value and operating voltage of pentacene OTFTs strongly depend on the gate dielectric material. [ 8–10 ]

Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

Abstract: An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

Pd induced lateral crystallization of amorphous si thin films

Abstract: A thin palladium layer (∼40 A) was selectively formed on top of amorphous silicon films before annealing and the effects of palladium layer on the crystallization behavior of the amorphous silicon films were investigated. It was observed that the amorphous silicon right under the Pd layer could be crystallized to grain sizes of several hundred angstroms by annealing at 500 °C. In addition, the area between the Pd thin pads, patterned by lithography, was found to be crystallized to grain sizes of a few tens of microns in length by the same annealing. Such lateral crystallization was found to reach more than 100 μm in some cases. The lateral crystallization phenomenon might be useful for the fabrication of low temperature polycrystalline‐Si thin film transistors, providing large‐grained Si films.