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Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.


Papers
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Patent
23 Mar 2001
TL;DR: In this paper, a thin film transistor with a ZnO film as active layer is presented, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics.
Abstract: (57) Abstract: Provided is a thin film transistor including a ZnO film as a semiconductor active layer, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics. A thin film transistor T1 formed on an insulating substrate 1. On the substrate 1, a gate electrode 2, a gate insulating film 31, an intermediate layer 32, and a semiconductor active layer 4 made of ZnO are sequentially formed. On the semiconductor active layer 4, a source electrode 5 and a drain electrode 6 are formed. ing. The mid layer 32 It is provided to prevent mobile ions (Zn ions) from entering the gate insulating film 32 from the semiconductor active layer (ZnO film) 4 and is made of silicon nitride.

1,124 citations

Journal ArticleDOI
TL;DR: In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.
Abstract: We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.

1,115 citations

Patent
16 Jun 2005
TL;DR: In this article, a process for fabricating a thin-film transistor device, wherein the substrate temperature is no more than 300° C during fabrication, is presented, where the transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material.
Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.

1,115 citations

Journal ArticleDOI
TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
Abstract: Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was controlled from ∼10−3to10−6Scm−1 by varying the mixing ratio of sputtering gases, O2∕(O2+Ar), from ∼3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a field-effect mobility of 12cm2V−1s−1, an on-off current ratio of ∼108, and a subthreshold gate voltage swing of 0.2Vdecade−1. It is demonstrated that a-IGZO is an appropriate semiconductor material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a production-compatible means.

1,094 citations

Patent
10 Oct 2003
TL;DR: In this paper, a process for making transparent oxide semiconductor thin film transistors (TFTs) is described. But this process is not suitable for transistors with high power consumption.
Abstract: This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.

1,086 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023341
2022918
2021640
20201,333
20192,015
20182,080