Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Light-induced bias stress reversal in polyfluorene thin-film transistors

Abstract: Gate bias-stress effects in the high-performance semiconducting polymer poly-9,9′ dioctyl-fluorene-co-bithiophene (F8T2) were studied. The bias stress in F8T2 was characterized in devices having various gate dielectric materials—different types of SiO2 and a polymer—and a variety of chemically modified dielectric/semiconductor interfaces. A bias-stress effect was reversed by illuminating the transistor structure with band gap radiation. The recovery rate was directly related to the absorption characteristics of F8T2. We conclude that bias stress in F8T2 is due to hole charge trapping inside the polymer, close to the dielectric interface and not to a structural change in the polymer, or to charge in the dielectric.

High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.

Abstract: Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn4Sn4O15, grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator. This structurally dense-packed semiconductor composition with minimal Zn2+ incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron mobilities of ∼90 cm2 V−1 s−1 (104 cm2 V−1 s−1 maximum obtained for patterned ZITO films), with Ion/Ioff ratio ∼105, a subthreshhold swing of ∼0.2 V/dec, and operating voltage <2 V for patterned devices with W/L = 50. The microstructural and electronic properties of ZITO semiconductor film compositions in the range Zn9−2xInxSnxO9+1.5x (x = 1−4) and ZnIn8−xSnxO13+0.5x (x = 1−7) were systematically investigated to elucidate those factors which yield optimum mobility, Ion/Ioff, and threshold voltage parameters. It is shown tha...

Stable ZnO thin film transistors by fast open air atomic layer deposition

Abstract: We report stable, high performance zinc oxide thin film transistors grown by an atmospheric pressure atomic layer deposition system. With all deposition and processing steps kept at or below 200°C, the alumina gate dielectric shows low leakage (below 10−8A∕cm2) and high breakdown fields. Zinc oxide thin film transistors in a bottom gate geometry yield on/off ratios above 108, near zero turn-on voltage, little or no hysteresis, and mobility greater than 10cm2∕Vs. With alumina passivation, shifts in threshold voltage under gate bias stress compare favorably to those reported in the literature.

Ambipolar Organic Field-Effect Transistors Based on a Solution-Processed Methanofullerene

Abstract: Organic field-effect transistors (OFETs, see Figure), based on the solution-processible methanofullerene [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM), have been fabricated in a bottom-contact device configuration using gold electrodes. The OFET functions either as a p- or n-channel device, depending upon the bias conditions. This is the first example of ambipolar charge transport in FETs based on pristine PCBM.

Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability.

Abstract: Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring oscillators have a stage delay of 18 mu s. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air.