Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

High-mobility amorphous In2O3–10wt%ZnO thin film transistors

Abstract: The authors report on the fabrication and characterization of thin film transistors that use sputter deposited amorphous indium zinc oxide both for the channel and source-drain metallizations in a gate-down configuration. The channel and source-drain layers were deposited from a single In2O3–10wt%ZnO ceramic target using dc magnetron sputtering onto an unheated substrate. The carrier densities in the channel (2.1×1017∕cm3) and source/drain regions (3.3×1020∕cm3) were adjusted by changing the reactive oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with saturation mobility of 20cm2∕Vs and on/off current ratio of 108.

Self-aligned contacts for transistors

Abstract: Self-aligned contacts for transistors and methods for fabricating the contacts are described. An etch resistant material is patterned to create an opening that resides above a transistor gate structure. A selective etch is performed through the opening that does not etch the transistor gate structure but does etch material that resides laterally with respect to the transistor gate structure in order to expose tops, immediately adjacent to the transistor gate structure, of drain and source regions of a diffusion layer of the transistor. Conductive material is deposited that covers respective tops of the drain and source regions of the diffusion layer of the transistor to a depth that does not short the drain and source region of the diffusion layer of the transistor. A layer above the conductive material is formed. Contacts are formed through the layer above the conductive material to respective portions of the conductive material that cover respective tops of the drain and source regions of the diffusion layer of the transistor.

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

Abstract: Metal oxide semiconductor structures can be both electrically conductive and optically transparent — an attractive combination for electronic devices. Their fabrication has typically involved the deposition of the precursors under vacuum, a method that is costly and can result in materials lacking uniformity over large surface areas. A team of researchers led by Byeong-Soo Bae at the Korea Advanced Institute of Science and Technology has alleviated these issues by devising a low-temperature fabrication route in aqueous media. Solution-based processes had been investigated, but often involved alcohol solvents that require high processing temperatures or complex and unstable precursors. An indium oxide thin film has now been prepared from an aqueous solution, at temperatures lower than 200 °C, that further served as the active layer of a fully transparent thin-film transistor. In addition, using plastic as a substrate enabled the construction of a transparent, flexible device.

Light responsive polymer field-effect transistor

Abstract: We report the effect of light incident on a polymer-based field-effect transistor and demonstrate the utility of light as an additional controlling parameter of the transistor state. The transistor exhibits large photosensitivity indicated by the sizable changes in the drain–source current at low levels of light. The response here is considerably higher than that from existing organic/polymeric planar, two-terminal photodetectors due to an additional process contributing to the enhancement. The light-responsive polymer transistor opens up a device-architecture concept for polymer-based electronics.