Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.

Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Abstract: We investigated the effects of bias stress on a passivation-free InZnO thin-film transistors (a-IZO TFTs) exposed to either the atmosphere or a vacuum. The magnitude of threshold voltage shift increased with the application duration of bias stress, to an extent that was much larger in the atmosphere than in the vacuum. The threshold voltage recovered slowly to its nearly initial value when the gate bias stress was removed. The electrical metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, and a dynamic equilibrium was finally achieved, regardless of the polarity of stress voltage.

Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Abstract: We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a-IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2/V s, an on/off ratio of 1.2×107, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

Abstract: Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit good electron mobility (5 to >; 50 cm2/V · s), they are transparent, and they can be processed at low temperatures. These new materials show a great promise for high-performance large-area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for organic light-emitting diode displays. Before any of these applications can be commercialized, however, a strong understanding of the stability and reliability of AOS TFTs is needed. The purpose of this paper is to provide a comprehensive review and summary of the recently emerging work on the stability and reliability of AOS TFTs with respect to illumination, bias stress, ambient effects, surface passivation, mechanical stress, and defects, as well as to point out areas for future work. An overview of the TFT operation and expected reliability concerns as well as a brief summary of the instabilities in the well-known Si3N4/a-Si:H system is also included.

Single-crystal Si films for thin-film transistor devices

Abstract: The fact that single-crystal Si would make an ideal material for thin-film transistor devices has long been recognized. Despite this awareness, a viable method by which such a material could be directly produced on a glass substrate has never been formulated. In this letter, it is shown experimentally that location-controlled single-crystal Si regions on a SiO2 surface can be obtained in a glass-substrate compatible manner, via excimer-laser-based sequential lateral solidification of thin Si films using a beamlet shape that self-selects and extends a single grain over an arbitrarily large area. This is accomplished by controlling the locations, shape, and extent of melting induced by the incident excimer-laser pulses, in such a manner as to induce interface-contour-affected sequential super-lateral growth of crystals, during which the tendency of grain boundaries to align approximately orthogonal to the solidifying interface is systematically exploited.