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Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.


Papers
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Journal ArticleDOI
TL;DR: This work built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V by combining the fabrication techniques of silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films.
Abstract: Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays.

189 citations

Proceedings ArticleDOI
01 Dec 2006
TL;DR: In this article, a double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory, and the bottom layer shows no sign of reliability degradation compared to the top layer, indicating the potential for further multi-layer stacking.
Abstract: A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly silicon (60 nm) channel and tri-gate P+-poly gate is integrated into a NAND array. Small devices (L/W=0.2/0.09 mum) with excellent performance and reliability properties are achieved. The bottom layer shows no sign of reliability degradation compared to the top layer, indicating the potential for further multi-layer stacking. The present work illustrates the feasibility of 3D flash memory

189 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor.
Abstract: During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm2/V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VTi (intrinsic threshold voltage).

187 citations

Patent
16 May 2002
TL;DR: In this paper, a process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate is described, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing Dielectric material; and depositing on the interfacial layers a layer comprising at least one high-k dielectrics material, in which the interfacer layer is grown by laser excitation of the silicon substratum in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof.
Abstract: A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.

187 citations

Patent
18 May 1999
TL;DR: In this paper, a device in which one or more thin-film transistors are monolithically integrated with a light emitting diode is disclosed, and the device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting device on the substrate and by employing low cost fabrication techniques.
Abstract: A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

187 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023341
2022918
2021640
20201,333
20192,015
20182,080