Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the authors reported high performance solution-deposited indium oxide thin-film transistors with field effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106.
Abstract: We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.
175 citations
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TL;DR: In this article, a fingerprint scanning array based on capacitance sensing has been made, which consists of a capacitor electrode and two poly-Si thin film transistors for addressing and read out.
Abstract: Novel fingerprint scanning arrays based upon capacitance sensing have been made Each sensor element consists of a capacitor electrode and two poly-Si thin film transistors for addressing and read out The devices were fabricated on glass, polyimide and polyethersulphone substrates using a low temperature (<250/spl deg/C) process
175 citations
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TL;DR: In this paper, a metal-induced-unilateral crystallization (MIUC) was proposed to remove from the edges of and within the channel region all major grain boundaries transverse to the drain current flow.
Abstract: Thin film transistors (TFTs) with low-temperature processed metal-induced laterally crystallized (MILC) channels and self-aligned metal-induction crystallized (MIC) source and drain regions have been demonstrated recently as potential devices for realizing electronics on large-area, inexpensive glass panels. While these TFTs are better than their solid-phase crystallized counterparts in many device performance measures, they suffer from higher off-state leakage current and early drain breakdown. A new technology is proposed, employing metal-induced-unilateral crystallization (MIUC), which results in the removal from the edges of and within the channel region all major grain boundaries transverse to the drain current flow. Compared to the conventional "bilateral" MILC TFTs, the new MIUC devices are shown to have higher field-effect mobility, significantly reduced leakage current, better immunity to early drain breakdown, and much improved spatial uniformity of the device parameters. Thus they are particularly suitable for realizing low temperature CMOS systems on inexpensive glass panels.
174 citations
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31 Jan 2013TL;DR: In this article, a thin-film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern disposed on the active pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active patterns.
Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
174 citations
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29 Sep 1986TL;DR: In this paper, an active matrix type display apparatus is presented, which includes a first electrode substrate having a transparent insulation substrate on which a thin film transistor is driven by the thin file transistor and a connecting portion for connecting the transistor with the transparent display pixel electrode.
Abstract: In an active matrix type display apparatus which includes a first electrode substrate having a transparent insulation substrate on which a thin film transistor a transparent display pixel electrode selectively driven by the thin file transistor and a connecting portion for connecting the thin film transistor with the transparent display pixel electrode are formed, a second electrode substrate having another transparent insulation substrate on which an opposing electrode formed of a transparent conductive film is formed, and a display medium sandwiched between the first and second electrode substrates, an electrically conductive light shielding layer which is fixed at a predetermined potential is provided on each of thin film transistor portions of the first electrode substrate, and a part of the light shielding layer opposes a part of the transparent display pixel electrode through an insulation film so as to form a supplemental storage capacitor.
174 citations