Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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Patent•
13 Jan 2011TL;DR: In this article, a planarization pattern is used to fill the via hole in which the first pixel electrode is located and exposes the portion of the firstpixel electrode on the passivation layer.
Abstract: Provided is an organic light-emitting display device (OLED) and method of manufacturing the same. The OLED comprises a substrate and a thin film transistor, with source/drain electrodes, located at a predetermined area on the substrate. A passivation layer is located on the source/drain electrodes with a via hole exposing one of the source/drain electrodes. A first pixel electrode is located at the bottom of the via hole, electrically coupled to the exposed source/drain electrode, and extending onto the side wall of the via hole and the passivation layer. A planarization pattern fills the via hole in which the first pixel electrode is located and exposes the portion of the first pixel electrode on the passivation layer.
171 citations
Patent•
29 May 1998TL;DR: An electroluminescence device having a transistor substrate comprising drain electrode pads, each being connected to a drain of a thin-film transistor, and capacitors connected to the respective drain electrodes, arranged along a plurality of rows and columns, where the thin film transistor substrate and the electrolumecence substrate are placed opposite to each other so that the drain electrode pad and the Electrolume members are opposed to each another, and where each drain electrodes pad and one electrode of a pair of electrodes are connected through an adhesive electric connection member as mentioned in this paper.
Abstract: An electroluminescence device having a transistor substrate comprising drain electrode pads, each being connected to a drain of a thin film transistor, and capacitors connected to the respective drain electrode pads, and an electroluminescence substrate comprising pairs of electrodes and electroluminescence members each provided between a pair of electrodes, arranged along a plurality of rows and columns, wherein the thin film transistor substrate and the electroluminescence substrate are placed opposite to each other so that the drain electrode pads and the electroluminescence members are opposed to each other, and wherein each drain electrode pad and one electrode of a pair of electrodes are connected through an adhesive electric connection member.
171 citations
TL;DR: In this article, the authors showed that deep defects located above the valence band top are formed at a high density to a depth of ∼2 nm in the surface layer of the a-IGZO channel.
Abstract: Highly stable amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) against constant current stress and negative bias light illumination stress were realized by forming a Y2O3 passivation layer. A recent photoemission study revealed that deep defects located above the valence band top are formed at a high density to a depth of ∼2 nm in the surface layer of the a-IGZO channel. Here, we present that these deep defects are responsible for the instability of a-IGZO TFTs, and the instability can be much improved by passivation with Y2O3, which effectively eliminates the deep subgap defects from the surface of a-IGZO.
171 citations
Patent•
27 Aug 2007TL;DR: In this article, the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, including carbon species as a byproduct of formation are described.
Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.
171 citations
TL;DR: In this article, transparent thin-film transistors with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined.
Abstract: Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined. Solution-processed IZO thin films were amorphous and highly transparent with >90% transmittance in the visible region with an optical bandgap of 3.1 eV. Spin-coated IZO TTFTs were operated in depletion mode and showed a field-effect mobility as high as 7.3 cm 2 /V s, a threshold voltage of 2.5 V, an on/off current ratio greater than 10 7 , and a subthreshold slope of 1.47 V/decade.
170 citations