Topic
Thin-film transistor
About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.
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TL;DR: In this paper, a post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors.
Abstract: A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.
169 citations
TL;DR: In this paper, a solution-based process for the deposition of transparent conducting oxides through spin-coating or inkjet printing under ambient conditions was developed, which was shown to be smooth and uniform with an amorphous structure.
Abstract: We have developed a general and low-cost, solution-based process that is suitable for the deposition of transparent conducting oxides through spin-coating or inkjet printing under ambient conditions. Highly transparent (-95% in the visible portion) zinc tin oxide semiconducting thin films were deposited by spin coating. The deposited films were found to be smooth and uniform with an amorphous structure. Enhancement-mode metal-insulator-semiconductor field-effect transistors were fabricated showing a field-effect mobility (μ FE ) as high as 16 cm 2 /V s, a turn-on voltage of 2 V, a current on-to-off ratio greater than 10 5 , and a high on-current of 2.25 mA.
168 citations
TL;DR: In this paper, the use of Ta2O5 as gate dielectric material for organic thin-film transistors was reported, which is a relatively low-temperature process.
168 citations
TL;DR: Electronic systems on fl exible substrates posses the advantage of mechanical fl exibility in actual use, but also provide more rugged rollable devices and may therefore result in lower manufacturing costs associated with continuous roll-to-roll fabrication and lowtemperature solution processing is strongly desirable.
Abstract: Electronic systems on fl exible substrates posses the advantage of mechanical fl exibility in actual use, but also provide more rugged rollable devices and may therefore result in lower manufacturing costs associated with continuous roll-to-roll fabrication. To realize these advantages of fl exible electronics, lowtemperature solution processing is strongly desirable. In this regard, organic semiconductor materials have been extensively researched. [ 1 ] Organic semiconductor polymers are soluble in a variety of solvents, and small molecules can be derivatized to soluble precursors. Organic transistors can also be fabricated by solution processing near room temperature, [ 2 ] compatible with temperature-sensitive plastic substrates. [ 3–5 ] Despite successful demonstrations of fl exible organic electronics, however, they are generally sensitive to operating conditions and are unstable during long-term operation. [ 6 ]
168 citations
TL;DR: In this article, physically based analytical models for n-channel amorphous silicon thin film transistors and for n and p-channel polysilicon thin-film transistors are described.
Abstract: We describe physically based analytical models for n‐channel amorphous silicon thin film transistors and for n‐ and p‐channel polysilicon thin film transistors. The models cover all regimes of transistor operation: leakage, subthreshold, above‐threshold conduction, and the kink regime in polysilicon thin film transistors. The models contain a minimum number of parameters which are easily extracted and can be readily related to the structural and material properties of the thin film transistors. The models have been verified for a large number of devices to scale properly with device geometry.
168 citations