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Thin-film transistor

About: Thin-film transistor is a research topic. Over the lifetime, 48425 publications have been published within this topic receiving 680879 citations. The topic is also known as: TFT.


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Patent
Tomohiro Watanabe1
03 Apr 2008
TL;DR: In this paper, the authors presented a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the method including the steps of: forming a field-effect transistor on a substrate, forming an insulating layer, forming a lower electrode on the insulating layers, forming the organic layer for constituting an organic device on the lower electrode, and after the step of forming the semiconductor layer of the fieldeffect transistor, performing heat treatment such that an amount of a component that is desorbable as H 2 O from the field effect
Abstract: Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H 2 O from the field effect transistor during the step of forming the organic layer is less than 10 −5 g/m 2

168 citations

Journal ArticleDOI
TL;DR: Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters are proposed.
Abstract: Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.

168 citations

Patent
16 Jul 2002
TL;DR: In this paper, the authors proposed a peeling method which gives no damage to the peeled layers, and provided a semiconductor device which is made lightweight by sticking peeled layers on various base material, and its manufacturing method.
Abstract: PROBLEM TO BE SOLVED: To peel not only a peeled layer with small area, but also a peeled layer with large area over the entire surface in good yield by providing a peeling method which gives no damage to the peeled layers, to provide a semiconductor device which is made lightweight by sticking the peeled layers on various base material, and its manufacturing method, and to provide a semiconductor device which is made lightweight by sticking various elements (a thin-film diode, and a photoelectric converting element and silicon resistance element composed of PIN junctions of silicon) represented by a TFT, specially, on flexible film, and its manufacturing method. SOLUTION: A metal layer or nitride layer 11 is provided on a substrate, an oxide layer 12 is provided in contact with the metal layer or nitride layer 11. Even after lamination film formation or a heat treatment of ≥500°C is carried out, fine separation in the oxide layer 12 or on its interface can easily be carried out by a physical means. COPYRIGHT: (C)2003,JPO

168 citations

Journal ArticleDOI
TL;DR: In this paper, the authors evaluated amorphous silicon thin-film transistors (TFTs) fabricated on polyimide foil under uniaxial compressive or tensile strain.
Abstract: We evaluated amorphous silicon thin-film transistors (TFTs) fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. The on- current and hence the electron linear mobility μ depend on strain e as μ=μ0(1+26×e), where tensile strain has a positive sign and the strain is parallel to the TFT source-drain current path. Upon the application of compressive or tensile strain the mobility changes “instantly” and under compression then remains constant for up to 40 h. In tension, the TFTs fail mechanically at a strain of about +0.003 but recover if the strain is released “immediately.”

168 citations

Patent
07 Jun 1995
TL;DR: In this article, a method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film.
Abstract: A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.

168 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023341
2022918
2021640
20201,333
20192,015
20182,080