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Total pressure
About: Total pressure is a research topic. Over the lifetime, 5199 publications have been published within this topic receiving 66658 citations.
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TL;DR: In this paper, the effects of total pressure on the structural, optical and electrical properties of the films were studied using X-ray diffraction, scanning electron microscopy, reflectance spectra and resistivity measurements.
33 citations
TL;DR: In this article, a systematic study of the influence of oxygen partial pressure, RF power and sputtering gas pressure on thin NiOx films' properties was carried out, and the structural, microstructural, optical and electrical properties were affected differently by the sputtering parameters.
Abstract: Highly conductive and transparent NiOx films can be very useful as buffer layers for the optimization of the p-type contacts of optoelectronic devices. Thin NiOx films were fabricated by reactive radio frequency (RF) sputtering at room temperature starting from a Ni target. A systematic study of the influence of oxygen partial pressure, RF power and sputtering gas pressure on the films' properties was carried out. The structural, microstructural, optical and electrical properties were affected differently by the sputtering parameters. Resistivity decreased by increasing the oxygen partial pressure and the sputtering total pressure and by decreasing the RF power, while transmittance increased by decreasing the oxygen partial pressure and by increasing the RF power and sputtering pressure. Minimum resistivity of 1.6 × 10−2 Ωcm and a visible transmittance of 40% were achieved for a film grown in a pure oxygen atmosphere, while a higher transmittance of 54% and a resistivity of ρ = 1.1 × 10−1 Ωcm were obtained for a film grown at 30% oxygen partial pressure. The trends of transmittance and resistivity as a function of the oxygen pressure during the sputtering process can be explained in terms of the amount of Ni3+ defects deduced by x-ray photoelectron spectroscopy (XPS) measurements. The full interpretation of the other results is less straightforward and highlights the relevance of the samples' structural properties.
33 citations
TL;DR: In this article, a liquid density model for the H2O-CO2-NaCl ternary system is established, based on previous methods (Duan et al. 2008, 22, 1666-1674), and combined with a recent density model.
33 citations
TL;DR: In this paper, a pulse radiolysis technique has been used to measure a rate constant of (6.6±1.3) x 10−12 cm3 molecule−1 s−1 for the association reaction between CF3C(O)O2 radicals and NO2 at 295 K and one atmosphere total pressure of SF6 diluent.
33 citations
TL;DR: In this article, the kinetic behavior of HO2 and ClO radicals in photolysis of Cl2-H2-O2-N2 mixtures, in the total pressure range 50 −760 Torr, has been investigated by molecular modulation.
Abstract: The kinetic behaviour of HO2 and ClO radicals in the photolysis of Cl2–H2–O2–N2 mixtures, in the total pressure range 50–760 Torr, has been investigated by molecular modulation–u.v. absorption. Rate coefficients for the reactions Cl + HO2→ HCl + O2(3a), Cl + HO2→ OH + ClO (3b) and ClO + HO2→ HOCl + O2(6) were obtained. At 308 K the preferred values were k3a= 4.4 × 10–11 cm3 molecule–1 s–1, k3b= 9.4 × 10–12 cm3 molecule–1 s–1 independent of pressure, but owing to uncertainties in the calculated [Cl] these values may be, respectively, low and high by a factor of two. A corresponding uncertainty exists in the pressure dependence. The value of k6=(6.2 ± 1.5)× 10–12 cm3 molecule–1 s–1 at 308 K was well determined and was independent of pressure in the range 50–760 Torr.
33 citations