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Total pressure

About: Total pressure is a research topic. Over the lifetime, 5199 publications have been published within this topic receiving 66658 citations.


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31 May 1964
TL;DR: In this paper, the authors measured the total pressure and the angle of swirl across a vortex in a tube using a pitot probe upstream of breakdown and measured the static pressure distribution along the length of the tube containing the breakdown.
Abstract: The distribution of the total pressure and the angle of swirl across a vortex in a tube were measured using a pitot probe upstream of breakdown. The static pressure distribution along the length of the tube containing the breakdown was also measured. It was found that the total pressure fell sharply in the vortex core towards a very low value on the axis, and that the swirl-angle distribution was similar to that of an exponential vortex. The static pressure distribution along the wall of the tube was found to include a positive pressure gradient upstream and a negative pressure gradient downstream of the breakdowns position. When breakdown did not occur these pressure gradients were not present. From the total pressure and swirl-angle distributions across the vortex, the static and dynamic pressure distributions and the axial and circumferential velocity distributions were calculated. These results will be used as boudary conditions for numerical solution of the equations of motion of the vortex.

21 citations

Journal ArticleDOI
TL;DR: In this article, the authors proposed the sp2 cluster model for the diamond-like carbon (DLC) structure, which consists of conductive clusters of sp2 carbons surrounded by a dielectric matrix sea.
Abstract: To elucidate the relationship between the structure and the electrical characteristics of diamond-like carbon (DLC) films, DLC films were synthesized in a well-controlled glow discharge with the aid of photoelectrons in an argon/methane atmosphere. The dielectric constant and breakdown strength of the films exhibited opposite behaviors, depending on the total pressure during the synthesis. The product of these two values decreased monotonically as the pressure increased. The Raman spectra were analyzed with a Voigt-type formula. Based on the results, the authors propose the “sp2 cluster model” for the DLC structure. This model consists of conductive clusters of sp2 carbons surrounded by a dielectric matrix sea of sp2 carbon, sp3 carbon, and hydrogen, and indicates that the dielectric constant of the whole DLC film is determined by the balance between the dielectric constant of the matrix and the total size of the clusters, while the breakdown strength is determined by the reciprocal of the cluster size. T...

21 citations

Journal ArticleDOI
TL;DR: In this article, the authors describe the experimental device which enables the measurement of the total pressure and concentrations of the vapour phase (and thus the knowledge of the partial pressures of the different gaseous species) for the HI-I2-H2O mixture in the 20-140°C range and up to 2-bar.

21 citations

Journal ArticleDOI
TL;DR: In this paper, the preparation of spinel zinc chromite, ZnCr 2 O 4, single crystals by close-spaced chemical transport with Cl 2 as a transport agent has been studied.

21 citations

Journal ArticleDOI
TL;DR: In this article, the saturation vapor pressure of silicon in a wide range of temperatures has been analyzed and it has been established that no reliable experimental data in the range of high temperatures (above 2000 K) are available in the literature.
Abstract: Reference books and original studies devoted to the determination of the saturation vapor pressure of silicon in a wide range of temperatures have been analyzed. It has been established that no reliable experimental data in the range of high temperatures (above 2000 K) are available in the literature. It has been demonstrated that there is a need to perform additional theoretical and experimental investigations with the use of different methods. The total pressure and partial pressures of Si n (n = 1−6) molecules over liquid silicon are calculated in the temperature range 1700–3400 K. The calculation of the composition of the gas phase over the “Si(l)-container” systems is performed. Materials of the crucibles intended for the use in experimental investigations of the temperature dependence of the saturation vapor pressure of silicon over the liquid phase are recommended.

21 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202225
2021127
2020147
2019153
2018128