Topic
Total pressure
About: Total pressure is a research topic. Over the lifetime, 5199 publications have been published within this topic receiving 66658 citations.
Papers published on a yearly basis
Papers
More filters
•
03 Apr 1992
TL;DR: In this article, a magnetic thin film containing Co is formed in a noble gas atmosphere containing oxygen by a specified proportion to the nitrogen partial pressure, and the magnetic characteristics of the medium are controlled with good reproducibility.
Abstract: PURPOSE:To control magnetic characteristics such as coercive force, squareness ratio, coercive force squareness ratio, etc., with good reproducibility by forming a magnetic thin film containing Co in a noble gas atmosphere containing oxygen by a specified proportion to the nitrogen partial pressure. CONSTITUTION:The atmosphere for forming the magnetic thin film containing Co is specified to such a noble gas atmosphere containing 0.1 - 10% oxygen to the nitrogen partial pressure. The nitrogen partial pressure is not limited and preferably about 1 - 100% of the total pressure. By controlling the partial pressure ratio of oxygen to nitrogen, magnetic characteristics of the medium, especially, coercive force Hc, squareness ratio S and coercive force squareness ratio S* are controlled with good reproducibility.
69 citations
••
TL;DR: Applications to demonstrate the versatility and reliability of the numerical method employed have concentrated on high-β off-axis energetic particle deposition with large parallel and perpendicular pressure anisotropies in a 2-field period quasiaxisymmetric stellarator reactor system.
69 citations
••
TL;DR: In this paper, a new a-Si:H-like material has been obtained in a radio frequency-powered plasmaenhanced chemical vapor deposition system (RF-PECVD), which was prepared with dilution of silane into He or H2, under high total pressure (≈132 Pa) and high RF power exhibits enhanced electronic transport properties.
Abstract: A new a-Si:H-like material has been obtained in a radio frequency-powered plasma-enhanced chemical vapor deposition system (RF-PECVD). This material prepared with dilution of silane into He or H2, under high total pressure (≈132 Pa) and high RF power exhibits enhanced electronic transport properties. The room temperature electronic mobility-lifetime product is increased by a factor up to 200 compared to hydrogenated amorphous silicon (a-Si:H) prepared under standard deposition conditions (lower pressure, lower RF power). The density of states measured by modulated photocurrent and the deep defect density measured by the constant photocurrent method are both less than that of standard a-Si:H. These transport properties are linked to the structure of this new material deposited under conditions close to those for powder formation. This structure seems to result in a decrease of the deep defect density and capture cross sections.
69 citations
••
TL;DR: In this article, a 15m long, 56mm diameter, inclinable stainless steel pipe using Exxsol D60 oil (viscosity 1.64mPa s, density 790 kg/m3) and water (vensity 1.0 Ã 0 Ã 1 Ã ) was used to investigate oil-water flow in horizontal and slightly inclined pipes.
68 citations
••
TL;DR: In this article, a detailed kinetic study is presented in order to determine the limiting steps in the chemical vapour deposition of SiC from CH3SiCl3 (MTS) H 2 gaseous mixture.
68 citations