Transimpedance amplifier

About: Transimpedance amplifier is a research topic. Over the lifetime, 5425 publications have been published within this topic receiving 53707 citations. The topic is also known as: transimpedance amplifier.

Analog design essentials

Abstract: Comparison of MOST and Bipolar transistor models.- Amplifiers, Source followers & Cascodes.- Differential Voltage and Current amplifiers.- Noise performance of elementary transistor stages.- Stability of Operational amplifiers.- Systematic Design of Operational Amplifiers.- Important opamp configurations.- Fully-differential amplifiers.- Design of Multistage Operational amplifiers.- Current-input Operational Amplifiers.- Rail-to-rail input and output amplifiers.- Class AB and driver amplifiers.- Feedback Voltage and Transconductance Amplifiers.- Feedback Transimpedance and Current Amplifiers.- Offset and CMRR: Random and systematic.- Bandgap and current reference circuits.- Switched-capacitor filters.- Distortion in elementary transistor circuits.- Continuous-time filters.- CMOS ADC and DAC principles.- Low-power Sigma-Delta AD converters.- Design of crystal oscillators.- Low-noise amplifiers.- Coupling effects in Mixed analog-digital ICs.

Bandwidth extension in CMOS with optimized on-chip inductors

Abstract: We present a technique for enhancing the bandwidth of gigahertz broad-band circuitry by using optimized on-chip spiral inductors as shunt-peaking elements. The series resistance of the on-chip inductor is incorporated as part of the load resistance to permit a large inductance to be realized with minimum area and capacitance. Simple, accurate inductance expressions are used in a lumped circuit inductor model to allow the passive and active components in the circuit to be simultaneously optimized. A quick and efficient global optimization method, based on geometric programming, is discussed. The bandwidth extension technique is applied in the implementation of a 2.125-Gbaud preamplifier that employs a common-gate input stage followed by a cascoded common-source stage. On-chip shunt peaking is introduced at the dominant pole to improve the overall system performance, including a 40% increase in the transimpedance. This implementation achieves a 1.6-k/spl Omega/ transimpedance and a 0.6-/spl mu/A input-referred current noise, while operating with a photodiode capacitance of 0.6 pF. A fully differential topology ensures good substrate and supply noise immunity. The amplifier, implemented in a triple-metal, single-poly, 14-GHz f/sub Tmax/, 0.5-/spl mu/m CMOS process, dissipates 225 mW, of which 110 mW is consumed by the 50-/spl Omega/ output driver stage. The optimized on-chip inductors consume only 15% of the total area of 0.6 mm/sup 2/.

Touch controller with improved analog front end

Abstract: A controller for a touch sensor includes a transimpedance amplifier, and a feedback resistor coupled to an input of the transimpedance amplifier and to an output of the transimpedance amplifier. At least one multiplexor may be coupled to the input of the transimpedance amplifier and configured to multiplex a plurality of analog inputs to one dedicated channel. The controller may further include a bandpass filter coupled to the output of the transimpedance amplifier. The output of the bandpass filter may be input to an anti-aliasing filter, which feeds into an analog to digital converter. Alternatively, the output of the bandpass filter may be input to a sigma-delta analog to digital converter.

Distributed Amplification

Abstract: This paper presents a new principle in wide-band amplifier design. It is shown that, by an appropriate distribution of ordinary electron tubes along artificial transmission lines, it is possible to obtain amplification over much greater bandwidths than would be possible with ordinary circuits. The ordinary concept of "maximum bandwidth-gain product" does not apply to this distributed amplifier. The high-frequency limit of the distributed amplifier appears to be determined by the grid-loading effects. The distributed amplifier provides means for designing amplifiers either of the low-pass or band-pass types. The low-pass amplifiers can be made to have a uniform frequency response from dc to frequencies as high as several hundred Mc using commercially available tubes. The general design considerations included in this paper are: The effect of improper termination of transmission lines; methods for controlling the frequency response and phase characteristic; the design which provides the required gain with fewest possible number of tubes; and a discussion of high-frequency limitations. The noise factor of the amplifier is evaluated. Practical amplifiers, designed according to the principles described in this paper, have been built and have verified the theoretical predictions. Experimental work will be described in a forthcoming paper.

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current

Abstract: We present a compact 13 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 08 A/W and dark current of 3 nA The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications