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Transistor

About: Transistor is a(n) research topic. Over the lifetime, 138090 publication(s) have been published within this topic receiving 1455233 citation(s).

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Papers
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Journal ArticleDOI: 10.1038/NATURE03090
Kenji Nomura1, Hiromichi Ohta1, Akihiro Takagi1, Toshio Kamiya1  +2 moreInstitutions (1)
25 Nov 2004-Nature
Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

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Topics: Amorphous silicon (58%), Indium gallium zinc oxide (56%), Thin-film transistor (55%) ...read more

6,692 Citations


Journal ArticleDOI: 10.1038/29954
01 May 1998-Nature
Abstract: The use of individual molecules as functional electronic devices was first proposed in the 1970s (ref 1) Since then, molecular electronics2,3 has attracted much interest, particularly because it could lead to conceptually new miniaturization strategies in the electronics and computer industry The realization of single-molecule devices has remained challenging, largely owing to difficulties in achieving electrical contact to individual molecules Recent advances in nanotechnology, however, have resulted in electrical measurements on single molecules4,5,6,7 Here we report the fabrication of a field-effect transistor—a three-terminal switching device—that consists of one semiconducting8,9,10 single-wall carbon nanotube11,12 connected to two metal electrodes By applying a voltage to a gate electrode, the nanotube can be switched from a conducting to an insulating state We have previously reported5 similar behaviour for a metallic single-wall carbon nanotube operated at extremely low temperatures The present device, in contrast, operates at room temperature, thereby meeting an important requirement for potential practical applications Electrical measurements on the nanotube transistor indicate that its operation characteristics can be qualitatively described by the semiclassical band-bending models currently used for traditional semiconductor devices The fabrication of the three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics

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Topics: Carbon nanotube field-effect transistor (64%), Nanotube (58%), Electrical measurements (56%) ...read more

5,147 Citations


Journal ArticleDOI: 10.1126/SCIENCE.290.5499.2123
15 Dec 2000-Science
Abstract: Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10 5 were achieved.

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Topics: Printed electronics (64%), Integrated circuit (55%), Transistor (53%)

3,091 Citations


Open accessBook
01 Jan 1987-
Abstract: 1. SEMICONDUCTORS, JUNCTIONS AND MOFSET OVERVIEW 2. THE TWO-TERMINAL MOS STRUCTURE 3. THE THREE-TERMINAL MOS STRUCTURE 4. THE FOUR-TERMINAL MOS STRUCTURE 5. MOS TRANSISTORS WITH ION-IMPLANTED CHANNELS 6. SMALL-DIMENSION EFFECTS 7. THE MOS TRANSISTOR IN DYNAMIC OPERATION - LARGE-SIGNAL MODELING 8. SMALL-SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES 9. HIGH-FREQUENCY SMALL-SIGNAL MODELS 10.MOFSET MODELING FOR CIRCUIT SIMULATION

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Topics: Metal gate (69%), Transistor (57%)

3,086 Citations


Journal ArticleDOI: 10.1126/SCIENCE.1083212
Kenji Nomura1, Hiromichi Ohta1, Kazushige Ueda1, Toshio Kamiya1  +2 moreInstitutions (1)
23 May 2003-Science
Abstract: We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

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Topics: Gate oxide (57%), Thin-film transistor (57%), Field-effect transistor (56%) ...read more

2,616 Citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202225
20211,783
20203,677
20194,203
20184,241
20173,987

Top Attributes

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Topic's top 5 most impactful authors

Shunpei Yamazaki

351 papers, 4.5K citations

Katsuhide Uchino

134 papers, 2.6K citations

Leonard Forbes

97 papers, 4.5K citations

Michael Shur

89 papers, 3.8K citations

Chenming Hu

74 papers, 4.4K citations

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