Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
Papers published on a yearly basis
Papers
More filters
01 Sep 2012
TL;DR: In this article, the authors demonstrate an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology.
Abstract: Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-byside on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.
218 citations
••
07 Nov 2002
TL;DR: Improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes.
Abstract: Wide bandgap semiconductors show promise for high-power microwave electronic devices. Primarily due to low breakdown voltage, it has not been possible to design and fabricate solid-state transistors that can yield radio-frequency (RF) output power on the order of hundreds to thousands of watts. This has severely limited their use in power applications. Recent improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes. The most promising electronic devices for fabrication in wide bandgap semiconductors for these applications are metal-semiconductor field-effect transistors (MESFETs) fabricated from the 4H-SiC polytype and heterojunction field-effect transistors (HFETs) fabricated using the AlGaN/GaN heterojunction. These devices can provide RF output power on the order of 5-6 W/mm and 10-12 W/mm of gate periphery, respectively. 4H-SiC MESFETs should produce useful performance at least through X band and AlGaN/GaN HFETs should produce useful performance well into the millimeter-wave region, and potentially as high as 100 GHz.
217 citations
••
IBM1
TL;DR: In this article, a charge transfer p-doping scheme was proposed to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure, which allowed one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the ON and OFF states.
Abstract: This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion∕Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.
217 citations
•
01 Dec 2005TL;DR: In a semiconductor device including a memory region and a logic region, one or more of a plurality of logic transistor connection plugs, buried in a first insulating layer and connected to a diffusion layer of a logic transistor, are left unconnected to a first interconnect provided in an upper layer as mentioned in this paper.
Abstract: In a semiconductor device including a memory region and a logic region, one or more of a plurality of logic transistor connection plugs, buried in a first insulating layer and connected to a diffusion layer of a logic transistor, are left unconnected to a first interconnect provided in an upper layer.
217 citations
••
TL;DR: The tri-gate normally-off GaN on-Si field effect transistor (MISFET) was proposed in this paper, achieving a breakdown voltage of 565 V at a drain leakage current of 0.6 μA/mm and Vgs = 0.80 ± 0.06 V.
Abstract: We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field- effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 μA/mm and Vgs = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 ± 9 mV/decade. The threshold voltage of the new device is 0.80 ± 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.
217 citations