Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic

Abstract: Recent advances in the area of quantum functional devices are discussed. After a discussion of the functional device concept, resonant-tunneling bipolar transistors (RTBTs) with a double barrier in the base region are described. Design considerations for RTBTs with ballistic injection and the first observation of minority-electron ballistic RT are presented. RTBTs using thermionic injection and exhibiting a high peak-to-valley ratio at room temperature in the transfer characteristics are also described. Multiple-state RTBTs and their DC and microwave performance are then discussed. Circuit applications of RTBTs also are discussed. It is shown that RTBTs allow the implementation of many analog and digital circuit functions with a greatly reduced number of transistors and show considerable promise for multiple-valued logic. Experimental results on frequency multipliers and parity bit generators are presented. Analog-to-digital converters are memory circuits are also discussed. Two novel superlattice-base transistors are reported. Negative transconductance is achieved by suppression of injection into minibands. Gated quantum-well RT transistors are also discussed. >

Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

Abstract: The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is demonstrated. The results show that the critical parameter that governs the sensitivity of the resonant detection is ωτ, where ω is the radiation frequency and τ is the momentum scattering time. By lowering the temperature and hence increasing τ and increasing the detection frequency ω, we reached ωτ∼1 and observed resonant detection of 600 GHz radiation in a 0.15 μm gate length GaAs field-effect transistor. The evolution of the observed photoresponse signal with temperature and frequency is reproduced well within the framework of a theoretical model.

Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications.

Abstract: The increasing interest in flexible electronics and flexible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-film transistors used in active-matrix displays is considered. The change of electrical performance of thin-film semiconductor materials under mechanical stress is studied, including amorphous oxide semiconductors. This study comprises an experimental part, in which transistor structures are characterized under different mechanical loads, as well as a theoretical part, in which the changes in energy band structures in the presence of stress and strain are investigated. The performance of amorphous oxide semiconductors are compared to reported results on organic semiconductors and covalent semiconductors, i.e., amorphous silicon and polysilicon. In order to compare the semiconductor materials, it is required to include the influence of the other transistor layers on the strain profile. The bending limits are investigated, and shown to be due to failures in the gate dielectric and/or the contacts. Design rules are proposed to minimize strain in transistor stacks and in transistor arrays. Finally, an overview of the present and future applications of flexible thin-film transistors is given, and the suitability of the different material classes for those applications is assessed.

A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

Abstract: This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices. A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a new design criterion for IEGT operation. A fabricated 4500 V IEGT realized a 2.5 V forward voltage drop at 100 A/cm/sup 2/. The IEGT had a current density over ten times that of conventional trench gate IGBT at 2.5 V forward voltage drop. An operation mode of IEGT has been theoretically and experimentally confirmed. >