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Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: In this article, a new type of graphene-based transistor was proposed to allow lower voltage, lower power operation than possible with complementary metal-oxide-semiconductor (CMOS) field effect transistors.
Abstract: We propose a new type of graphene-based transistor intended to allow lower voltage, lower power operation than possible with complementary metal-oxide-semiconductor (CMOS) field-effect transistors. Increased energy efficiency is not only important for its own sake, but is also necessary to allow continued device scaling and the resulting increase in computational power in CMOS-like logic circuits. We describe the basic device structure and physics and predicted current-voltage characteristics. Advantages over CMOS in terms of lower voltage and power are discussed.
211 citations
TL;DR: A field-effect transistor with thin films of picene thin films fabricated on SiO2 gate dielectric showed p-channel enhancement-type FET characteristics with the field- effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5).
Abstract: A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm2 V−1 s−1 and the on−off ratio of >105. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.
211 citations
TL;DR: In this paper, the effect of light incident on a polymer-based field effect transistor was investigated and the utility of light as an additional controlling parameter of the transistor state was demonstrated.
Abstract: We report the effect of light incident on a polymer-based field-effect transistor and demonstrate the utility of light as an additional controlling parameter of the transistor state. The transistor exhibits large photosensitivity indicated by the sizable changes in the drain–source current at low levels of light. The response here is considerably higher than that from existing organic/polymeric planar, two-terminal photodetectors due to an additional process contributing to the enhancement. The light-responsive polymer transistor opens up a device-architecture concept for polymer-based electronics.
211 citations
Patent•
28 Dec 2000TL;DR: In this paper, a frame-addressed bistable micromirror array and method of operation is presented, where an analog input signal representing the desired intensity of an image pixel is applied to input 302 and an address signal synchronized to the analog input signals is applied on input 304 to store the pixel intensity information on input capacitor 306.
Abstract: A frame-addressed bistable micromirror array and method of operation. An analog input signal representing the desired intensity of an image pixel is applied to input 302 . An address signal synchronized to the analog input signal is applied to input 304 of a given micromirror cell to store the pixel intensity information on input capacitor 306 . After intensity information for each pixel in the video frame or field, or a portion of the frame of field, is stored on the input capacitor 306 of the appropriate micromirror cell, a frame signal is applied to input 308 to enable the transfer of charge between capacitors 306 and 310 and to turn on transistor 314 allowing a voltage applied to input 316 to charge capacitor 318 . The pre-charge voltage is chosen to ensure the biased micromirrors are fully deflected to a first state. A ramp voltage is applied to input 322 . A ramp voltage is applied to input 322 . When the difference between the voltage across capacitor 310 , which is applied to the gate of transistor 324 , and the ramp voltage, which is applied to the drain of transistor 324 , exceeds the threshold voltage required to turn on transistor 324 , transistor 324 is turned on, and the voltage across capacitor 318 follows the ramp voltage applied to 322 . The range of the ramp voltage is chosen so that, when any ramp voltage in the range is applied to the deflectable element of the micromirror, the deflectable element will assume the second state.
211 citations
01 Apr 1992
TL;DR: In this article, a tutorial review on the modulation-doped field effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented.
Abstract: A tutorial review on the modulation-doped field-effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented. It is believed that with further advances in material growth and device scaling significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future. >
210 citations