Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: By varying device geometry, organic electrochemical transistors that exhibit their maximum transconductance at zero gate bias are engineered, allowing the design of a simplified amplifying transducer, allowing for improved integration with biomedical systems where prolonged gate bias can be detrimental.
Abstract: By varying device geometry we have engineered organic electrochemical transistors that exhibit their maximum transconductance at zero gate bias. This enables the design of a simplified amplifying transducer, allowing for improved integration with biomedical systems where prolonged gate bias can be detrimental. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
201 citations
Patent•
04 Apr 2014
TL;DR: In this article, the gate-length bias length is replaced with a bias length that is small compared to the nominal gate length, where the bias length can be less than 10% of the nominal one.
Abstract: Methods and apparatus for a gate-length biasing methodology for optimizing integrated digital circuits are described. The gate-length biasing methodology replaces a nominal gate-length of a transistor with a biased gate-length, where the biased gate-length includes a bias length that is small compared to the nominal gate-length. In an exemplary embodiment, the bias length is less than 10% of the nominal gate-length.
201 citations
TL;DR: The fact that the properties of ReSe2 can be tuned in terms of the number of layers and gas molecule gating, and single-layer Re Se2 with appropriate band-gap is a promising material for future functional device applications is highlighted.
Abstract: The ability to control the appropriate layer thickness of transition metal dichalcogenides (TMDs) affords the opportunity to engineer many properties for a variety of applications in possible technological fields. Here we demonstrate that band-gap and mobility of ReSe2 nanosheet, a new member of the TMDs, increase when the layer number decreases, thus influencing the performances of ReSe2 transistors with different layers. A single-layer ReSe2 transistor shows much higher device mobility of 9.78 cm2 V−1 s−1 than few-layer transistors (0.10 cm2 V−1 s−1). Moreover, a single-layer device shows high sensitivity to red light (633 nm) and has a light-improved mobility of 14.1 cm2 V−1 s−1. Molecular physisorption is used as “gating” to modulate the carrier density of our single-layer transistors, resulting in a high photoresponsivity (Rλ) of 95 A W−1 and external quantum efficiency (EQE) of 18 645% in O2 environment. This work highlights the fact that the properties of ReSe2 can be tuned in terms of the number of layers and gas molecule gating, and single-layer ReSe2 with appropriate band-gap is a promising material for future functional device applications.
200 citations
TL;DR: In this article, the authors reported electric field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJ) with high resistance-area product and diameters down to 50 nm.
Abstract: We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.
200 citations
Patent•
04 Dec 2003TL;DR: In this article, a light emitting display for compensating for the threshold voltage of transistor or mobility and fully charging a data line is presented, where a transistor and first through third switches are formed on a pixel circuit of an organic EL display.
Abstract: A light emitting display for compensating for the threshold voltage of transistor or mobility and fully charging a data line. A transistor and first through third switches are formed on a pixel circuit of an organic EL display. The transistor supplies a driving current for emitting an organic EL element (OLED). The first switch diode-connects the transistor. A first storage unit stores a first voltage corresponding to a threshold voltage of the transistor. A second switch transmits a data current in response to a select signal. A second storage unit stores a second voltage corresponding to the data current. A third switch transmits the driving current to the OLED. A third voltage determined by coupling of the first and second storage units is applied to a transistor to supply the driving current to the OLED.
200 citations