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Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the second and third harmonic distortion for a given set of input frequencies and transistor parameters is computed using the Volterra series representation, where the nonlinear nodal equations are solved by expressing nodal voltages in terms of the VOLTERRA series expansion of the input voltage.
Abstract: Intermodulation distortion due to nonlinear elements in transistors is analyzed using Volterra series representation. It is shown that this technique is well suited for the analysis of transistor distortion where the nonlinearities are small but frequency dependent. An ac transistor model incorporating four nonlinearities is briefly described. The nonlinear nodal equations of the model are successively solved by expressing nodal voltages in terms of the Volterra series expansion of the input voltage. Based on this analysis, a digital computer program has been developed which computes the second and the third harmonic distortion for a given set of input frequencies and transistor parameters. The results compare favorably with measured values. This method also enables the derivation of closed form ac expressions for a simplified model; these expressions show the dependence of distortion on frequency, load and source impedances, bias currents and voltages, and the parameters of the transistor. The technique is also extended to cascaded transistors, and simplified expressions for the overall distortion in terms of the distortion and gain of individual transistors are derived. Finally, a few pertinent practical applications are discussed.

192 citations

Patent
25 Apr 2012
TL;DR: In this article, a shift register circuit is defined, which consists of a first transistor connected between a clock terminal and an output terminal, a second transistor for charging a control electrode of the first transistor in response to activation of an output signal of the preceding stage, a third transistor for discharging the control node of the second transistor, an inverter using a control node as an output end, and a fourth transistor which discharges an input end of the inverter at power off and is turned off after power on.
Abstract: A shift register circuit comprises a first transistor connected between a clock terminal and an output terminal, a second transistor for charging a control electrode of the first transistor in response to activation of an output signal of the preceding stage, a third transistor for discharging the control electrode of the first transistor, an inverter using a control electrode of the third transistor as an output end, and a fourth transistor which discharges an input end of the inverter at power-off and is turned off after power-on. A fifth transistor which is a load element of the inverter charges the control electrode of the third transistor at power-on. It is thereby possible to initialize the respective levels of the nodes without any external initialization signal and prevent a decrease in the level change rate of the output signal in the shift register circuit.

192 citations

Journal ArticleDOI
TL;DR: The fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz is reported, paving the way for future multi-GHz nanoelectronics.
Abstract: Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

192 citations

Patent
25 Apr 1985
TL;DR: In this article, a film field effect transistor is proposed to operate at fast switching rates for use in video display applications, where the transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material.
Abstract: There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

192 citations

Patent
13 Nov 2007
TL;DR: In this paper, the authors proposed a rectifier circuit with at least a first capacitor, a second capacitor, and a diode which are sequentially connected in series in a path which connects an input terminal and one of two output terminals.
Abstract: It is an object of the present invention to provide a rectifier circuit that can suppress deterioration or dielectric breakdown of a semiconductor element due to excessive current. A rectifier circuit of the present invention includes at least a first capacitor, a second capacitor, and a diode which are sequentially connected in series in a path which connects an input terminal and one of two output terminals, and a transistor. The second capacitor is connected between one of a source region and a drain region and a gate electrode of the transistor. Further, the other one of the source region and the drain region and the other one of two output terminals are connected each other.

192 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231,850
20224,013
20211,802
20203,677
20194,203
20184,241