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Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.


Papers
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Patent
06 Feb 1997
TL;DR: In this paper, a family of CFET logic circuits useful for wave-pipeline systems is described, and a method to design the same is presented. And, NAND, OR, NOR, XOR, XNOR, select, select-invert, invert, and notinvert functions.
Abstract: A family of CFET logic circuits useful for wave-pipeline systems is described, and a method to design same. The invention uses complementary transmission gates and pull-up or pull-down transistors to achieve a family of CFET logic circuits which include AND, NAND, OR, NOR, XOR, XNOR, select, select-invert, invert, and not-invert functions. Each circuit is tuned to provide substantially equal delays, high-quality ones and zeros, and substantially equal rise and fall times, for every combination of input-state transition and output-state transition.

191 citations

Journal ArticleDOI
TL;DR: In this article, the authors explore the high-frequency performance potential of carbon nantube field effect transistors (CNTFETs) and show that using an array of parallel nanotubes as the transistor channel reduces parasitic capacitance per tube.
Abstract: Self-consistent quantum simulations are used to explore the high-frequency performance potential of carbon nantube field-effect transistors (CNTFETs). The cutoff frequency expected for a recently reported CNT Schottky-barrier FET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel reduces parasitic capacitance per tube. Increasing tube density gives a large improvement of high-frequency performance when tubes are widely spaced and parasitic capacitance dominates but only a small improvement when the tube spacing is small and intrinsic gate capacitance dominates. Alternatively, using quasi-one-dimensional nanowires as source and drain contacts should significantly reduce parasitic capacitance and improve high-frequency performance. Ballistic CNTFETs should outperform ballistic Si MOSFETs in terms of the high-frequency performance limit because of their larger band-structure-limited velocity.

191 citations

Patent
Arai Norihisa1
01 Feb 2000
TL;DR: In this article, the authors proposed a semiconductor device consisting of a substrate, a device isolation insulating film, a plurality of transistors arranged in the transistor region, and an anti-inversion diffusion layer under the device-isolation insulation film.
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing rise in the threshold voltage in an HV transistor, and to provide a method for manufacturing the device. SOLUTION: The semiconductor device includes a semiconductor substrate 10, a device isolation insulating film 204 for isolating the semiconductor substrate 10 of a transistor region as a device region, a plurality of transistors arranged in the transistor region, and an anti-inversion diffusion layer 209 formed under the device-isolation insulation film 204. The transistor includes a gate insulating film 11 formed on the device region, a gate electrode 203 extending over the device isolation insulation film 204 formed on the gate insulation film 11, and a diffusion layer 18, formed on the surface of the semiconductor substrate 10 so as to sandwich the gate electrode 203 in between. The device-isolation insulating film 204 includes a region 204-1 juxtaposing the device region and a region 204-2 having the bottom deeper than that of the region 204-1. The anti-inversion diffusion layer 209 is formed under the region 204-2. COPYRIGHT: (C)2011,JPO&INPIT

190 citations

Journal ArticleDOI
TL;DR: In this paper, complete vertical trench gate metal oxide semiconductor field effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time.
Abstract: Completely vertical trench gate metal oxide semiconductor field-effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time. These MOSFETs exhibited enhancement-mode operation with a threshold voltage of 3.7 V and an on-resistance of 9.3 mΩcm2. The channel mobility was estimated to be 131 cm2/(Vs) when all the resistances except for that of the channel are considered. Such structures, which satisfy the key words "vertical", "trench gate", and "MOSFET", will enable us to fabricate practical GaN-based power switching devices.

190 citations

Patent
19 Jan 2000
TL;DR: In this article, a semiconductor integrated circuit device is provided on a polycrystalline substrate, and includes a plurality of word lines, data lines, and an electrically programmable and erasable non-volatile memory cells respectively coupled to the plurality of words and data lines.
Abstract: A semiconductor integrated circuit device is provided on a semiconductor substrate, and includes a plurality of word lines, a plurality of data lines, and a plurality of electrically programmable and erasable non-volatile memory cells respectively coupled to the plurality of word lines and to the plurality of data lines. The erasable non-volatile memory cell each includes a MIS transistor having a floating gate having a first level polycrystalline silicon layer, a source, and a drain coupled to the corresponding data line, and a control gate formed of a semiconductor region in the semiconductor substrate, the control gate being coupled to the corresponding word line.

190 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231,850
20224,013
20211,802
20203,677
20194,203
20184,241