scispace - formally typeset
Search or ask a question
Topic

Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects as discussed by the authors, and the conditions to maximize the hydrogenation effect were briefly investigated.
Abstract: Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.

186 citations

Journal ArticleDOI
TL;DR: In this paper, the authors describe a new operation mode of the SOI MOSFET, which enables lateral bipolar current to be added to the MOS channel current and enhances the current drive capability of the device.
Abstract: This paper describes a new operation mode of the SOI MOSFET. Connecting the floating substrate to the gate in a short-channel SOI MOSFET allows lateral bipolar current to be added to the MOS channel current and thereby enhances the current drive capability of the device. Part of the bipolar current emitted by the source terminal merges into the channel before reaching the drain, which renders the base width substantially shorter than the gate length. This novel operating mode of a short-channel SOI transistor is particularly attractive for high-speed operation, since the device is capable of both reduced voltage swing operation and high current drive, n-p-n and p-n-p devices, as well as complementary inverters have been successfully fabricated.

186 citations

Patent
14 Dec 1998
TL;DR: In this article, the authors propose a low power transmitter for remote keyless entry systems, which includes a transmitter circuit portion and a gain control circuit portion, which is coupled with an inductive load that introduces a resonant frequency that provides radio frequency gain control.
Abstract: A low power transmitter useful for vehicle remote keyless entry systems, for example, includes a transmitter circuit portion and a gain control circuit portion. The gain control circuit portion preferably includes an inductive load that introduces a resonant frequency that provides radio frequency gain control. The transmitter circuit portion preferably includes a transistor having a collector node and an emitter node. The gain controller circuit preferably includes a capacitive load coupled between the emitter node and the collector node of the transistor. The inductive load preferably is coupled between the emitter node of the transistor and ground.

186 citations

Journal ArticleDOI
TL;DR: In this paper, a new theory describing currentvoltage characteristics of amorphous silicon thin-film transistors is presented, where drain current is expressed through the free-carrier concentration at the source side of the channel.
Abstract: We present a new theory describing current‐voltage characteristics of amorphous silicon thin‐film transistors. We calculate the output conductance in saturation by considering channel shortening effects caused by the space‐charge‐limited current in the pinch‐off region. In this model the drain current is expressed through the free‐carrier concentration at the source side of the channel. This allows us to obtain an accurate description of the different operating regimes of a thin‐film transistor using one equation that accounts for the dependence of the free‐carrier concentration in the channel for different regimes. Our model is in good agreement both with experimental data and the results of our two‐dimensional computer simulation. This approach allows one to account for different distributions of localized states in the energy gap. The model has also been developed to be incorporated into a circuit simulator and used for computer‐aided design of amorphous silicon integrated circuits.

186 citations

Journal ArticleDOI
TL;DR: The low-loss photonlike propagation combined with strong nonlinearities associated with their excitonic component makes polariton-based transistors particularly attractive for the implementation of all-optical integrated circuits.
Abstract: A polariton condensate transistor switch is realized through optical excitation of a microcavity ridge with two beams. The ballistically ejected polaritons from a condensate formed at the source are gated using the 20 times weaker second beam to switch on and off the flux of polaritons. In the absence of the gate beam the small built-in detuning creates a potential landscape in which ejected polaritons are channelled toward the end of the ridge where they condense. The low-loss photonlike propagation combined with strong nonlinearities associated with their excitonic component makes polariton-based transistors particularly attractive for the implementation of all-optical integrated circuits.

186 citations


Network Information
Related Topics (5)
Capacitor
166.6K papers, 1.4M citations
90% related
Silicon
196K papers, 3M citations
89% related
Voltage
296.3K papers, 1.7M citations
88% related
Amplifier
163.9K papers, 1.3M citations
88% related
Chemical vapor deposition
69.7K papers, 1.3M citations
86% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231,850
20224,013
20211,802
20203,677
20194,203
20184,241