Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

A voltage-controllable linear MOS transconductor using bias offset technique

Abstract: A linear large-signal MOS transconductor with the gain adjustable linearly by a voltage is described. A perfect linear transfer characteristic is obtained by two cross-coupled differential transistor pairs operating in saturation pairwise at unequal bias, offering offset-free operation, with both differential or single-ended input and differential output. Single-ended output is achievable by use of a current mirror. The nonlinearity caused by mobility reduction, channel-length modulation, mismatch, etc. is discussed. A test circuit with transconductance of 6.25 mu mho has been built with 3- mu m MOS components, and a linearity error of less than +or-1% was measured for an input voltage range from -4 to 4 V. >

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Abstract: A distinctive approach for forming a lateral bipolar charge-plasma transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge-plasma layers on undoped silicon-on-insulator (SOI) to form the emitter, base, and collector regions of a lateral n-p-n transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor (BJT) with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain, as compared with a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, which are serious issues in ultrathin SOI structures.

Pixel and organic light emitting display device using the same

Abstract: A display device displays an image having a substantially uniform brightness by compensating for variations of the threshold voltages of driving transistors and compensating for the deterioration of an organic light emitting diode. A pixel includes an organic light emitting diode, two transistors, a storage capacitor, and a compensation unit. A driving transistor supplies a current to an OLED corresponding to the voltage in the storage capacitor. The compensation unit controls a voltage of a gate electrode of the driving transistor corresponding to a deterioration of the organic light emitting diode, and couples one electrode of the driving transistor to the data line during a compensation period, during which a threshold voltage of the driving transistor is compensated.

Monolithic class D amplifier

Abstract: A monolithic integrated circuit is mounted in a speaker cabinet to drive the voice coil of the speaker. The monolithic integrated circuit may be a class D amplifier and is at least a half bridge or full bridge power MOSFET device. Structures comprise MOS switching devices of the bridge driver and N+ buried layer of the QVDMOS transistors of the bridge circuits.

A compact scattering model for the nanoscale double-gate MOSFET

Abstract: An analytically compact model for the nanoscale double gate metal-oxide semiconductor field effect transistor (MOSFET) based on McKelvey's flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nanoscale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the model also serves as an example of how semiclassical scattering theory can be used to develop physically sound models for nanoscale transistors.