Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Magnetic bipolar transistor

Abstract: A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

Power amplification and detection circuit, and transmitter and transceiver each using the same,

Abstract: PROBLEM TO BE SOLVED: To solve a problem where transmission output control can not be sufficiently performed because of the shortage of detection voltage sensitivity of a detection circuit and gain of output power decreases caused by a parasitic component that occurs at a collector terminal of a transistor for power amplification. SOLUTION: A power amplification and detection circuit includes a transistor for power amplification and a detection transistor which picks up a portion of an output signal of the transistor for power amplification, inputs the portion of the output signal from a base terminal and outputs detection voltage corresponding to an output level of the transistor for power amplification from an emitter terminal. The circuit uses the output of the emitter terminal of the transistor for power amplification as an input of the detection transistor. COPYRIGHT: (C)2008,JPO&INPIT

CMOS devices with a single work function gate electrode and method of fabrication

Abstract: Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby. Further described herein are methods of fabricating a device formed of complementary (pMOS and nMOS) transistors having semiconductor channel regions which have been band gap engineered to achieve a low threshold voltage.

A comparison of CMOS circuit techniques: differential cascode voltage switch logic versus conventional logic

Abstract: Differential cascode voltage switch (DCVS) logic is a CMOS circuit technique that has potential advantages over conventional NAND/NOR logic in terms of circuit delay, layout density, power dissipation, and logic flexibility. A detailed comparison of DCVS logic and conventional logic is carried out by simulation, using SPICE, of the performance of full adders designed using the different circuit techniques. The parameters compared are: input gate capacitance, number of transistors required, propagation delay time, and average power dissipation. In the static case, DCVS appears to be superior to full CMOS in regards to input capacitance and device count but inferior in regards to power dissipation. The speeds of the two technologies are similar. In the dynamic case, DCVS can be faster than more conventional CMOS dynamic logic, but only at the expense of increased device count and power dissipation.