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Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.


Papers
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Journal ArticleDOI
TL;DR: A facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition is reported, which can be applied through inkjet printing.
Abstract: Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate.

177 citations

Patent
24 Sep 2010
TL;DR: In this paper, the authors proposed a field effect transistor with metal oxide used for a channel, which has a structure having an excellent interface between a gate insulating layer and a channel layer.
Abstract: PROBLEM TO BE SOLVED: To provide a field effect transistor having metal oxide used for a channel, which has a structure having an excellent interface between a gate insulating layer and a channel layer. SOLUTION: The field effect transistor includes a substrate 1, wherein the transistor further includes, on the substrate 1; a gate electrode 5; the gate insulating film 6; the channel layer 4; a source electrode 2; and a drain electrode 3. The gate insulating layer 6 and channel layer 4 are layers consisting of at least gallium (Ga) and oxygen (O). COPYRIGHT: (C)2010,JPO&INPIT

177 citations

Patent
Kenji Sekine1, Masami Ohnishi1, Funaki Haruhiko1, Nobuo Masuda1, Akio Iso1 
17 Jul 1992
TL;DR: In this paper, a base bias control-type high-frequency power amplifier with a plural stage configuration was proposed, where a bias circuit was used to improve the power control linearity.
Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

176 citations

Journal ArticleDOI
TL;DR: A review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics is presented in this article, where some interesting electrical transport characteristics such as superconductivity, metal-insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors with various semiconductor channel layers and electrolyte materials.
Abstract: With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal–insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

176 citations

Journal ArticleDOI
10 Sep 2010-Science
TL;DR: A microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current is reported, a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology.
Abstract: Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.

176 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231,850
20224,013
20211,802
20203,677
20194,203
20184,241