Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

III-V layers for N-type and P-type MOS source-drain contacts

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. In some example embodiments, the techniques can be used to implement the contacts of MOS transistors of a CMOS device, where an intermediate III-V semiconductor material layer is provided between the p-type and n-type source/drain regions and their respective contact metals to significantly reduce contact resistance. The intermediate III-V semiconductor material layer may have a small bandgap (e.g., lower than 0.5 eV) and/or otherwise be doped to provide the desired conductivity. The techniques can be used on numerous transistor architectures (e.g., planar, finned, and nanowire transistors), including strained and unstrained channel structures.

A large-area flexible wireless power transmission sheet using printed plastic MEMS switches and organic field-effect transistors

Abstract: We have successfully manufactured a large-area power transmission sheet by using printing technologies. The position of electronic objects on this sheet can be contactlessly sensed by electromagnetic coupling using an organic transistor active matrix. Power is selectively fed to the objects by an electromagnetic field using a plastic MEMS-switching matrix.

Exfoliated multilayer MoTe2 field-effect transistors

Abstract: The properties of multilayer exfoliated MoTe2 field-effect transistors (FETs) on SiO2 were investigated for channel thicknesses from 6 to 44 monolayers (MLs). All transistors showed p-type conductivity at zero back-gate bias. For channel thicknesses of 8 ML or less, the transistors exhibited ambipolar characteristics. ON/OFF current ratio was greatest, 1 × 105, for the transistor with the thinnest channel, 6 ML. Devices showed a clear photoresponse to wavelengths between 510 and 1080 nm at room temperature. Temperature-dependent current-voltage measurements were performed on a FET with 30 layers of MoTe2. When the channel is turned-on and p-type, the temperature dependence is barrier-limited by the Au/Ti/MoTe2 contact with a hole activation energy of 0.13 eV. A long channel transistor model with Schottky barrier contacts is shown to be consistent with the common-source characteristics.

Layout designing apparatus for integrated circuit, transistor size determining apparatus, circuit characteristic evaluating method, and transistor size determining method

Abstract: The present invention realizes the optimization of a transistor size with higher precision and in a shorter time, in designing a layout for an integrated circuit. A diffusion sharing estimation section estimates a diffusion-sharing region in the layout of the integrated circuit based on circuit data. A circuit characteristic evaluation section evaluates the characteristics, such as area, delay and power consumption, of the integrated circuit in accordance with the information about the diffusion-sharing region estimated by the diffusion sharing estimation section. A transistor size optimization section sets various size candidates for each of the transistors, which constitute the integrated circuit, provides these size candidates to the diffusion sharing estimation section and the circuit characteristic evaluation section, and then selects an optimum transistor size from the transistor size candidates thus set in accordance with the evaluation results obtained by the circuit characteristic evaluation section. Thus, a transistor size can be determined while taking the diffusion sharing into consideration. In addition, unlike a conventional method, it is no longer necessary to repeatedly re-determine a transistor size and perform a compaction.

InP HBT Technologies for THz Integrated Circuits

Abstract: Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation ( $f_{\max}$ ) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.