Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation

Abstract: A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

Selection of Snubbers and Clamps to Optimize the Design of Transistor Switching Converters

Abstract: In power transistor switching circuits, shunt snubbers (dv/dt limiting capacitors) are often used to reduce the turn-off switching loss or prevent reverse-biased second breakdown. Similarly, series snubbers (di/dt limiting inductors) are used to reduce the turn-on switching loss or prevent forward-biased second breakdown. In both cases energy is stored in the reactive element of the snubber and is dissipated during its discharge. If the circuit includes a transformer, a voltage clamp across the transistor may be needed to absorb the energy trapped in the leakage inductance. The action of these typical snubber and clamp arrangements is analyzed and applied to optimize the design of a flyback converter used as a battery charger.

OLED active matrix using a single transistor current mode pixel design

Abstract: The present invention is a current driver for an active matrix organic light emitting device display. As embodied herein, the driver relies upon a single transistor, driven in a saturation regime to provide a current source for an OLED. This results in a pulse drive. The driver of the present invention is compatible with high speed integrated drivers and can be fabricated on the same substrate as the OLED. A technique for driving an OLED is disclosed that will produce a good quality gray scale image.

Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure

Abstract: Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p–n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron–hole pairs are readily separated by large built-in potential formed at the GaTe–MoS2 interface efficiently generating self-driven photocurrent within <10 ms. Overall results suggest that abrupt interfaces between vastly different material systems with different crystal symmetries still allow efficient charge transfer mechanisms at t...

In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams

Abstract: A new unipolar electronic device with a quasi‐one‐dimensional (1D) tunable carrier channel defined by directly written focused ion beams has been fabricated and characterized. Special features of the device are simple and rapid fabrication in one single technology step, inherent self‐alignment, and linear instead of planar gates with very low capacitances. High integration as well as ultrahigh speed operation in logical and linear applications are feasible. The striking new aspect of this in‐plane‐gate structure is that the confining electric field is parallel to the two‐dimensional electron gas, and the distorted, insulating region serves as a dielectric. Ballistic 1D transport is observed at low temperatures, and field‐effect transistor operation of the device is demonstrated up to room temperature.