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Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.


Papers
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Journal ArticleDOI
TL;DR: The Fully-Additive proposed amplifier and DAC are benchmarked against reported realizations, and are shown to be highly competitive despite its realization based on the simple low-cost proposed Fully- additive process.

163 citations

Patent
07 Aug 1986
TL;DR: In this paper, the output circuit comprises an output transistor circuit for applying an output signal to a transmission line connected to an output terminal, a circuit for driving the output transistors circuit in response to an input signal applied to the input terminal, and a control circuit by which the signal amplitude of a first wave applicable to the transmission line with a load connected to the output terminal through the output line is rendered approximately one half of the output signal amplitude.
Abstract: An output circuit comprises an output transistor circuit for applying an output signal to a transmission line connected to an output terminal, a circuit for driving the output transistor circuit in response to an input signal applied to an input terminal, and a control circuit by which the signal amplitude of a first wave applicable to the transmission line with a load connected to the output terminal through the transmission line is rendered approximately one half of the output signal amplitude with a load directly connected to the output terminal. The control circuit includes a monitoring transistor within the same chip as the output transistor circuit, a selected one of the output resistance and input signal of the output transistor circuit being controlled in accordance with the magnitude of the drain current of the monitoring transistor to adjust the amplitude of the signal applied to the transmission line. Transmission with transmitting and receiving ends having a well-defined transmission waveform is obtained, thereby making possible high-speed signal transmission between LSI chips.

163 citations

Patent
03 Feb 2006
TL;DR: In this article, a silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described, which enables the RF switch to withstand RF signals of varying and increased power levels.
Abstract: A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of input/output nodes and a common RF node. The switching and shunting stacked transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. In one embodiment, the transistor groupings are “symmetrically” stacked in the RF switch (i.e., the transistor groupings all comprise an identical number of transistors). In another embodiment, the transistor groupings are “asymmetrically” stacked in the RF switch (i.e., at least one transistor grouping comprises a number of transistors that is unequal to the number of transistors comprising at least one other transistor grouping). The stacked configuration of the transistor groupings enable the RF switch to withstand RF signals of varying and increased power levels. The asymmetrically stacked transistor grouping RF switch facilitates area-efficient implementation of the RF switch in an integrated circuit. Maximum input and output signal power levels can be withstood using a reduced number of stacked transistors.

163 citations

Patent
Eitaro Nishigaki1
31 Jan 2000
TL;DR: In this paper, a drive unit for driving a corresponding one of organic EL elements of an active matrix EL display device includes a blanking switch for blanking the video signal stored in a storage capacitor in each frame period before the start of the next frame period.
Abstract: A drive unit for driving a corresponding one of organic EL elements of an active matrix EL display device includes a blanking switch for blanking the video signal stored in a storage capacitor in each frame period before the start of the next frame period. A drive transistor drives a corresponding EL element based on the correct current supplied for this If the video signal is a current signal, a transistor operating as a current-voltage converter is provided

163 citations

Journal ArticleDOI
TL;DR: In this paper, the potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field effect transistor (FET) devices that contain films of p-type zinc oxide with arsenic as the p type dopant.
Abstract: The potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field-effect transistor (FET) devices that contain films of p-type ZnO with arsenic as the p-type dopant. These p-type films have high crystalline quality and show long-term stability. The ZnO UV photodetectors are based on p-n junctions. The FETs are made with metal-semiconductor Schottky contacts on p-type ZnO and are normally off (enhancement) devices. The spectral and electrical characteristics of these devices are presented and explained.

163 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231,850
20224,013
20211,802
20203,677
20194,203
20184,241