Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Transistor in a semiconductor device and method of manufacturing the same

Abstract: The present invention relates to a transistor in a semiconductor device and method of manufacturing the same, more particularly to a new dual gate P + salicide forming technology having an elevated channel and a source/drain using the selective SiGe epi-silicon growth technology. It relates to manufacturing of a high performance surface channel PMOS salicide which has the following effects: it can increase the current driving force by using an elevate channel structure of Si/SiGe/Si at the channel portion for increasing the current driving force, thus making the stress induced by the buried SiGe layer increase the carrier mobility, it has an increased current driving force effect due to reduction of the work function of the poly-SiGe being mid-band gap materials, it can improve the short channel effect by an improved gate poly depletion suppression due to an increased activation of boron at SiGe, it can suppress the leakage current at the junction by forming a buried/elevated SiGe layer at the junction portion to form a band gap engineered junction, and it can obtain a still shallower junction due to suppression of diffusion of boron doped at the junction layer.

Charge-Plasma Based Process Variation Immune Junctionless Transistor

Abstract: In this letter, we report for the first time a distinctive approach of implementing a junctionless transistor (JLT) without doping (doping-less) the ultrathin silicon film. A charge-plasma concept is employed to induce n-region for the formation of source and drain for a n-channel JLT using appropriate metal work function electrodes. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped JLT of identical dimensions. In conventional JLTs, the channel doping concentration is generally kept high to ensure high ON-state current, but it causes variation in threshold voltage, which may be due to process variations. The proposed device solves the problem of threshold voltage variability without affecting inherent advantages of JLTs.

Selected harmonic reduction in static D-C — A-C inverters

Abstract: An a-c voltage control technique is described that eliminates the third and fifth harmonic voltage present in the a-c load-voltage waveform of a 2-controlled-rectifier or transistor d-c to a-c single-phase inverter. The addition of two more controlled rectifiers or transistors to the basic circuit makes it possible to control the fundamental frequency component of the a-c load voltage from maximum to zero without reintroducing the third and fifth harmonics. The same technique can be used in a 12-controlled-rectifier or transistor d-c to 3-phase a-c inverter. In the case of the 3-phase inverter, the lowest harmonic of the fundamental frequency present in the line-to-line a-c voltage is the eleventh.

Logic gates based on ion transistors

Abstract: Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so far been presented and most of them are not functional at physiological salt concentrations. Here we report integrated chemical logic gates based on ion bipolar junction transistors. Inverters and NAND gates of both npn type and complementary type are demonstrated. We find that complementary ion gates have higher gain and lower power consumption, as compared with the single transistor-type gates, which imitates the advantages of complementary logics found in conventional electronics. Ion inverters and NAND gates lay the groundwork for further development of solid-state chemical delivery circuits.

High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

Abstract: Two-dimensional materials are of interest for the development of electronic devices due to their useful properties and compatibility with silicon-based technology. Van der Waals heterostructures, in which two-dimensional materials are stacked on top of each other, allow different materials and properties to be combined and for multifunctional devices to be created. Here we show that an asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molybdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier. Due to the asymmetric structure of the device, charge-carrier injection can be switched between tunnelling and thermal activation under negative and positive bias conditions, respectively. As a result, the device exhibits a high current on/off ratio of 6 × 108 and a rectifying ratio of ~108. The device can also function as a programmable rectifier with stable retention and continuously tunable memory states, as well as a high program/erase current ratio of ~109 and a rectification ratio of ~107. An asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molybdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier.